AON6450 100V N-Channel MOSFET General Description The AON6450 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Features VDS 100V ID (at VGS=10V) 52A RDS(ON) (at VGS=10V) < 14.5mΩ RDS(ON) (at VGS = 7V) < 17.5mΩ Top View D 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C V A 110 9 IDSM A 7 Avalanche Current C IAR 41 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 84 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD 2.3 Steady-State Steady-State RθJA RθJC W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Junction and Storage Temperature Range 1/7 ±25 33 IDM TA=70°C Units V 52 ID TC=100°C Maximum 100 -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AON6450 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ 10 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.8 ID(ON) On state drain current VGS=10V, VDS=5V 110 TJ=55°C 50 VDS=0V, VGS= ±25V 100 VGS=10V, ID=20A 3.3 22.8 27.5 VGS=7V, ID=20A 14 17.5 mΩ VDS=5V, ID=20A 52 1 V 85 A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Rg Gate resistance V 14.5 gFS Output Capacitance nA 12.1 Static Drain-Source On-Resistance Reverse Transfer Capacitance 3.8 µA A RDS(ON) Coss Units V VDS=100V, VGS=0V IDSS Crss Max VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=50V, ID=20A mΩ S 2000 2570 3100 pF 170 250 330 pF 50 80 120 pF 0.4 0.8 1.2 Ω 34 43 52 nC 11 14 17 nC 8 13.5 19 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 17 24 31 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 75 108 140 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω 15 ns 5 ns 28.5 ns 5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/7 www.freescale.net.cn AON6450 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 110 110 10V 100 7V 90 7.5V 90 6.5V 80 70 70 60 60 ID(A) ID (A) 80 50 6V 40 VDS=5V 100 50 40 30 30 20 10 10 0 0 0 1 2 3 125°C 20 VGS=5.5V 4 25°C 0 5 2 3 4 5 6 7 8 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 Normalized On-Resistance 2.2 15 VGS=7V RDS(ON) (mΩ ) 1 14 13 VGS=10V 12 2 VGS=10V ID=20A 1.8 17 5 2 VGS=7V10 1.6 1.4 1.2 ID=20A 1 0.8 11 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 30 1.0E+02 ID=20A 1.0E+01 25 40 125°C 20 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 1.0E-01 1.0E-02 15 1.0E-03 10 25°C 1.0E-04 1.0E-05 5 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/7 25°C 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 (Note E) www.freescale.net.cn AON6450 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=50V ID=20A 3000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2500 2000 1500 Coss 1000 2 Crss 500 0 0 0 10 20 30 40 0 50 Qg (nC) Figure 7: Gate-Charge Characteristics 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 400 1000.0 TJ(Max)=150°C TC=25°C 350 10µs 100.0 RDS(ON) limited 10.0 300 10µs Power (W) ID (Amps) 100 100µs DC 1ms 1.0 TJ(Max)=150°C TC=25°C 0.1 250 17 5 2 10 200 150 100 50 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/7 www.freescale.net.cn AON6450 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 TA=25°C 80 50 Power Dissipation (W) IAR (A) Peak Avalanche Current 60 TA=100°C 40 TA=150°C 30 20 10 TA=125°C 70 60 50 40 30 20 10 0 0 0 0.000001 0.00001 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 30 20 17 5 2 10 100 10 10 1 0.0001 0 0 25 50 75 100 125 0.01 1 100 TCASE (°C) Figure 14: Current De-rating (Note F) 10000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 5/7 www.freescale.net.cn AON6450 100V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 26 20 18 25ºC 16 Qrr 90 125ºC 0.8 10 12 30 25ºC Irm 5 10 15 20 25 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current Is=20A 180 125ºC 22 25ºC 18 15 90 14 125ºC Qrr 10 60 25ºC 30 Irm 0 2 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt 30 2 35 125ºC 1.5 25 trr 20 1 25ºC 15 25ºC 10 6 25 Is=20A trr (ns) 120 20 40 Irm (A) Qrr (nC) 10 30 150 6/7 5 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 26 210 0.4 125ºC 8 0 25ºC S 5 10 0 1.2 25ºC 15 14 60 1.6 trr trr (ns) 120 20 Irm (A) Qrr (nC) 150 125ºC di/dt=800A/µs 25 22 S 180 2 30 24 125ºC di/dt=800A/µs S 210 0.5 S 5 125ºC 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AON6450 100V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 7/7 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn