AON7752 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS ( αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low R DS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Features VDS 30V ID (at VGS=10V) 16A RDS(ON) (at VGS=10V) < 8.2mΩ RDS(ON) (at VGS = 4.5V) < 14.5mΩ D Top View 1 8 2 7 3 6 4 5 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentG Pulsed Drain Current C Avalanche Current C A 15 A 12 IAS 22 A Avalanche energy L=0.05mH C EAS 12 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 8.3 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 20 PD TA=25°C 1/6 V 12 IDSM TA=70°C ±20 64 IDM TA=25°C Continuous Drain Current Units V 16 ID TC=100°C Maximum 30 -55 to 150 Typ 30 60 5 °C Max 40 75 6 Units °C/W °C/W °C/W www.freescale.net.cn AON7752 30V N-Channel AlphaMOS Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS，ID=250µA RDS(ON) Static Drain-Source On-Resistance 100 1.5 VGS=10V, ID=16A TJ=125°C VGS=4.5V, ID=10A gFS Forward Transconductance VDS=5V, ID=16A VSD Diode Forward Voltage IS=0.2A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 2 VGS=10V, VDS=15V, ID=16A 1 mA ±100 nA 2.5 V 6.8 8.2 9.8 12 11.6 14.5 mΩ 0.65 V 16 A 62 0.45 mΩ S 605 VGS=0V, VDS=15V, f=1MHz Units V 0.5 TJ=55°C VGS(th) Max 30 VDS=30V, VGS=0V IGSS Coss Typ pF 275 pF 36.5 pF 2 3 Ω 11 15 nC 5.5 8 nC 2 nC Gate Drain Charge 2.6 nC Turn-On DelayTime 5 ns 2.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=0.9Ω, RGEN=3Ω 17 ns 3 ns IF=16A, dI/dt=500A/µs 11.5 Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/µs 12.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7752 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 10V 4.5V 5V VDS=5V 60 60 4V ID(A) ID (A) 7V 40 40 3.5V 125°C 20 20 25°C VGS=3.0V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.6 14 Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ Ω) 12 10 8 6 VGS=10V 4 2 VGS=10V ID=16A 1.4 1.2 VGS=4.5V ID=10A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+01 ID=16A 1.0E+00 20 125°C 40 125°C 1.0E-02 10 25°C 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 3/6 IS (A) RDS(ON) (mΩ Ω) 1.0E-01 15 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7752 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=16A 8 6 4 Ciss 1200 1000 800 600 Coss 400 2 200 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 0 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 160 10µs 100.0 25 RDS(ON) 100µs DC 1ms 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs Power (W) 10.0 5 200 1000.0 ID (Amps) Crss 0 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=6°C/W PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7752 30V N-Channel AlphaMOS TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 Current rating ID(A) Power Dissipation (W) 25 15 10 5 0 10 5 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 100.0 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C TA=25°C TA=100°C 10.0 Power (W) IAR (A) Peak Avalanche Current 15 TA=150°C 1000 100 10 TA=125°C 1 1.0 1 10 100 1000 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) Time in avalanche, tA (µ µs) Figure 14: Single Pulse Avalanche capability (Note C) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7752 30V N-Channel AlphaMOS Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn