AON7902 30V Dual Asymmetric N-Channel MOSFET General Description The AON7902 is designed to provide a high efficienc y synchronous buck power stage with optimal layout an d board space utilization. It includes two specializ ed MOSFETs in a dual Power DFN3.3x3.3A package. The Q1 "High Side" MOSFET is designed to minimize switchin g losses. The Q2 "Low Side" MOSFET use advance trenc h technology with a monolithically integrated Schotty to provide excellent R DS(ON) and low gate charge. The AON7902 is well suited for use in compact DC/DC converter applications. Product Summary VDS Q1 30V Q2 30V ID (at VGS=10V) 27A 40A RDS(ON) (at VGS=10V) <21mΩ <6.2mΩ RDS(ON) (at VGS = 4.5V) <28mΩ <7.4mΩ Bottom View Top View 100% UIS Tested 100% Rg Tested G2 S2 8 1 7 2 G1 D2/S1 6 3 5 4 S2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C IDSM TA=70°C Units V ±12 V 24 40 15 31 90 150 8 13 6 10 IAS, IAR 22 36 A EAS, EAR 24 65 mJ 17 50 7 20 1.8 1.8 1.1 1.1 Power Dissipation PD TC=100°C TA=25°C Power Dissipation A PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC -55 to 150 Typ Q1 27 60 6 Typ Q2 27 60 2 Max Q1 Max Q2 35 35 72 72 7.5 2.5 D1 A Avalanche Energy L=0.1mH C B D1 A Avalanche Current C TC=25°C 1/11 ±20 IDM TA=25°C Max Q2 30 ID TC=100°C Continuous Drain Current Max Q1 D1 W W °C Units °C/W °C/W °C/W www.freescale.net.cn AON7902 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Max 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 90 Units V VDS=30V, VGS=0V IDSS TJ=55°C 5 µA 100 nA 1.8 2.3 V 17 21 24 29 VGS=4.5V, ID=4A 22 28 VGS=10V, ID=8A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C A mΩ mΩ gFS Forward Transconductance VDS=5V, ID=8A 33 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss 20 A 470 590 710 pF VGS=0V, VDS=15V, f=1MHz 250 360 470 pF 13 23 40 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.5 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7 9 11.0 nC Qg(4.5V) Total Gate Charge 3 4 5.0 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=8A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 1.5 nC 1.5 nC 6 ns 3 ns 18 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 8 11 3 14 ns Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 15 19 23 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/11 www.freescale.net.cn AON7902 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 10V VDS=5V 7V 25 4.5V 60 ID(A) ID (A) 20 40 3.5V 15 125°C 10 20 25°C 5 VGS=2.5V 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 25 Normalized On-Resistance 30 RDS(ON) (mΩ ) 0.5 VGS=4.5V 20 15 VGS=10V 10 VGS=10V ID=8A 1.6 1.4 17 VGS=4.5V 5 ID=4A 2 1.2 10 1 0.8 0 3 6 9 12 15 0 25 50 75 100 125 150 175 200 0 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 1.0E+02 ID=8A 1.0E+01 35 40 1.0E+00 125°C 1.0E-01 IS (A) RDS(ON) (mΩ ) 30 25 125°C 1.0E-03 15 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/11 25°C 1.0E-02 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7902 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=8A 1000 Capacitance (pF) VGS (Volts) 8 6 4 800 600 Coss 400 2 200 Crss 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 0 10 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 160 100.0 RDS(ON) limited 10.0 100us 1ms 1.0 DC 120 TJ(Max)=150°C TC=25°C 0.1 0.1 1 VDS (Volts) 80 40 0.0 0.01 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) Ciss 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=7.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/11 www.freescale.net.cn AON7902 Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 Power Dissipation (W) IAR (A) Peak Avalanche Current 100.0 TA=25°C TA=100°C TA=125°C TA=150°C 15 10 5 0 10.0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 30 TA=25°C 25 1000 20 Power (W) Current rating ID(A) 150 15 17 5 2 10 100 10 10 5 0 1 0 25 50 75 100 125 150 0.00001 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=72°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/11 www.freescale.net.cn AON7902 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=10mA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 150 TJ=55°C 500 100 nA 2.1 V 5.1 6.2 7.4 9 VGS=4.5V, ID=10A 5.7 7.4 mΩ 0.7 V 40 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=13A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mA 1.6 VGS=10V, ID=13A Output Capacitance Units V 0.5 Zero Gate Voltage Drain Current Coss Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge mΩ S 2800 3500 4200 pF 360 520 680 pF 150 260 450 pF 0.6 1.2 1.8 Ω 22 28 34 VGS=10V, VDS=15V, ID=13A Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs 10 13 16 Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs 16 21 26 nC 9 nC Gate Drain Charge 11 nC Turn-On DelayTime 8 ns 5 ns VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 50 ns 8 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 6/11 www.freescale.net.cn AON7902 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4.5V 80 80 3V 60 ID(A) ID (A) 60 125°C 25°C 40 40 2.5V 20 20 0 0 0 1 2 3 4 0 5 1 10 3 4 Normalized On-Resistance 2 8 RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 6 4 VGS=10V VGS=10V ID=13A 1.8 1.6 17 5 2 10 1.4 VGS=4.5V ID=10A 1.2 1 2 0.8 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 14 0 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+02 ID=13A 12 125°C 1.0E+01 125°C 8 25°C 1.0E-01 6 1.0E-02 4 25°C 1.0E-03 2 2 7/11 1.0E+00 IS (A) RDS(ON) (mΩ ) 40 10 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7902 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=15V ID=13A 4000 Capacitance (pF) VGS (Volts) 8 6 4 3000 2000 Crss 1000 2 Coss 0 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 0 70 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 10µs RDS(ON) limited 10.0 1ms DC 1.0 160 TJ(Max)=150°C TC=25°C 0.1 0.1 1 VDS (Volts) 120 80 40 0.0 0.01 TJ(Max)=150°C TC=25°C 100µs Power (W) 100.0 ID (Amps) Ciss 10 0 0.0001 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.5°C/W 40 1 PD 0.1 Single Pulse 0.01 0.00001 0.0001 Ton 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 8/11 www.freescale.net.cn AON7902 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=125°C 100 TA=150°C 40 30 20 10 0 10 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 50 10000 40 1000 50 150 TA=25°C Power (W) Current rating ID(A) 50 30 20 17 5 2 10 100 10 10 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=72°C/W 40 0.1 PD 0.01 Single Pulse 0.001 0.0001 0.001 0.01 Ton 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 9/11 www.freescale.net.cn AON7902 Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.7 20A 10A 5A 0.6 1.0E-02 0.5 IR (A) VSD (V) VDS=30V 1.0E-03 0.4 0.3 VDS=15V IS=1A 0.2 1.0E-04 0.1 0 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 30 di/dt=800A/µs 3 di/dt=800A/µs 125ºC 12 10 2.5 trr 25ºC 20 Qrr 6 trr (ns) 8 Irm (A) 10 25ºC 4 Irm 25ºC 10 0 5 10 15 2 8 20 1 S 0 0 15 125ºC 5 5 Irm trr (ns) 10 25 30 Is=20A 25ºC 3.5 3 15 Irm (A) 10 20 4 25ºC Qrr 15 trr 18 15 10 21 125ºC 20 5 IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 20 Is=20A 0.5 0 30 IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 25ºC 2 2 25 1.5 125ºC 6 4 125ºC 15 Qrr (nC) 50 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 14 12 125ºC 25 Qrr (nC) 0 50 2.5 125ºC 12 2 9 25ºC 1.5 S 6 1 3 125ºC 0.5 25ºC 0 0 0 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt 10/11 200 S 0 S 1.0E-05 0 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AON7902 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 11/11 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn