AON7932 30V Dual Asymmetric N-Channel MOSFET General Description The AON7932 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3x3A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET use advance trench technology with a monolithically integrated Schotty to provide excellent RDS(ON) and low gate charge. The AON7932 is well suited for use in compact DC/DC converter applications. Features Q1 Q2 VDS 30V 30V ID (at VGS=10V) 26A 35A RDS(ON) (at VGS=10V) <20mΩ <12mΩ RDS(ON) (at VGS = 4.5V) <30mΩ <15mΩ Top View 100% UIS Tested Bottom View 100% Rg Tested Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Max Q2 Units V ±20 ±12 V 26 35 30 ID TC=100°C Pulsed Drain Current C IDM TA=25°C Continuous Drain Current Max Q1 IDSM TA=70°C 16 22 70 110 6.6 8.1 5.3 6.5 A A Avalanche Current C IAS, IAR 18 17 A Avalanche Energy L=0.1mH C EAS, EAR 16 14 mJ 23 25 9 10 1.4 1.4 0.9 0.9 TC=25°C Power Dissipation B Power Dissipation A PD TC=100°C TA=25°C PDSM TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1 / 11 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC -55 to 150 Typ Q1 40 70 4.5 Max Q1 50 90 5.4 Typ Q2 40 70 4.2 W W °C Max Q2 50 90 5 Units °C/W °C/W °C/W www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Max 30 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 70 Units V VDS=30V, VGS=0V IDSS TJ=55°C 5 µA 100 nA 1.9 2.4 V 16 20 24 29 VGS=4.5V, ID=5.3A 23 30 mΩ 33 1 V 20 A VGS=10V, ID=6.6A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=6.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance A 0.75 mΩ S 300 380 460 pF VGS=0V, VDS=15V, f=1MHz 110 160 210 pF 7 13 22 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.5 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.4 6.5 Qg(4.5V) Total Gate Charge 2.3 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=6.6A VGS=10V, VDS=15V, RL=2.3Ω, RGEN=3Ω nC nC 1.3 nC 1 nC 10 ns 3 ns 15 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6.6A, dI/dt=500A/µs 6.8 8.5 10.2 Qrr Body Diode Reverse Recovery Charge IF=6.6A, dI/dt=500A/µs 12.8 16 19.2 5 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2 / 11 www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 25 VDS=5V 10V 20 7V 15 4.5V ID(A) ID (A) 60 40 4V 125°C 10 3.5V 20 5 25°C VGS=2.5V 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 30 VGS=4.5V 25 RDS(ON) (mΩ Ω) 0.5 20 15 VGS=10V 10 VGS=10V ID=6.6A 1.8 1.6 17 VGS=4.5V 5 ID=5.3A 1.4 2 10 1.2 1 0.8 0 3 6 9 12 15 0 25 50 75 100 125 150 175 200 0 Temperature (°C) 18Temperature Figure 4: On-Resistance vs. Junction (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 1.0E+02 ID=6.6A 1.0E+01 35 40 1.0E+00 125°C 1.0E-01 25 125°C 20 IS (A) RDS(ON) (mΩ Ω) 30 25°C 1.0E-02 1.0E-03 1.0E-04 15 25°C 1.0E-05 10 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3 / 11 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 600 VDS=15V ID=6.6A 500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 400 300 100 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 1000.0 160 100.0 RDS(ON) limited 10.0 TJ(Max)=150°C TC=25°C 10µs 100us 1ms 1.0 DC Power (W) ID (Amps) Coss 200 120 TJ(Max)=150°C TC=25°C 0.1 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.4°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 / 11 www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100.0 TA=100°C 10.0 TA=150°C TA=125°C 25 20 15 10 5 0 1.0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 10000 30 TA=25°C 25 1000 20 Power (W) Current rating ID(A) 150 15 17 5 2 10 100 10 10 5 1 0 0 25 50 75 100 125 0.00001 150 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=90°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5 / 11 www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Max 30 0.5 TJ=55°C 500 Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 ID(ON) On state drain current VGS=10V, VDS=5V 110 Units V VDS=30V, VGS=0V IGSS mA 100 nA 1.6 2.1 V 10 12 15 18 VGS=4.5V, ID=6.5A 12 15 mΩ 50 0.7 V 30 A VGS=10V, ID=8.1A RDS(ON) Typ Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=8.1A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance A 0.45 mΩ S 810 1020 1230 pF VGS=0V, VDS=15V, f=1MHz 77 111 150 pF 45 75 130 pF VGS=0V, VDS=0V, f=1MHz 0.5 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19 23 Qg(4.5V) Total Gate Charge 9 nC 4 nC 3 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=8.1A VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω nC 11 ns 5 ns 29 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8.1A, dI/dt=500A/µs 4 5.4 7 Qrr Body Diode Reverse Recovery Charge IF=8.1A, dI/dt=500A/µs 4 5.3 7 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 6 / 11 www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 10V 80 60 3V 60 125°C ID(A) 3.5V ID (A) 80 25°C 40 40 Vgs=2.5V 20 20 0 0 0 1 2 3 4 0 5 20 Normalized On-Resistance RDS(ON) (mΩ Ω) 3 4 5 2 16 VGS=4.5V 12 8 VGS=10V 4 VGS=10V ID=8.1A 1.8 1.6 17 5 2 10 1.4 VGS=4.5V ID=6.5A 1.2 1 0.8 0 0 3 0 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 ID=8.1A 35 125°C 1.0E+01 40 25 125°C 20 1.0E+00 IS (A) 30 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 25°C 1.0E-01 15 10 1.0E-02 25°C 5 1.0E-03 0 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 7 / 11 1 4 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 VDS=15V ID=8.1A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 2 800 600 400 Crss 200 0 0 0 4 8 12 16 20 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10 30 200 1000.0 10µs 100.0 10.0 TJ(Max)=150°C TC=25°C 160 100µs RDS(ON) limited 1ms DC 1.0 Power (W) ID (Amps) Coss 120 TJ(Max)=150°C TC=25°C 0.1 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5°C/W 40 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 8 / 11 www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 IAR (A) Peak Avalanche Current TA=25°C Power Dissipation (W) TA=100°C 10 TA=150°C TA=125°C 25 20 15 10 5 0 1 0.000001 0.00001 0.0001 0 0.001 25 50 10000 40 1000 75 100 125 150 TA=25°C Power (W) Current rating ID(A) 50 TCASE (° °C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 30 20 17 5 2 10 100 10 10 1 0 0.00001 0 25 50 75 100 125 TCASE (° °C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=90°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 9 / 11 www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.9 20A 0.8 1.0E-02 10A 5A 0.7 0.6 IR (A) VSD (V) VDS=30V 1.0E-03 1.0E-04 VDS=15V 0.5 0.4 0.3 IS=1A 0.2 1.0E-05 0.1 0 1.0E-06 0 50 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 16 150 200 10 4 di/dt=800A/µs di/dt=800A/µs 3.5 8 8 125ºC 3 25ºC 6 8 4 125ºC Qrr trr (ns) 125ºC Irm (A) 12 Qrr (nC) 100 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 10 2.5 6 trr 25ºC 2 4 1.5 125ºC 4 2 2 Irm 10 15 20 25 0 0 0 30 15 10 15 20 25 30 10 4 Is=20A Is=20A 3.5 12 125ºC 6 5 IS (A) Figure 19: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current IS (A) Figure 18: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 8 0.5 25ºC 0 5 1 S 25ºC 0 0 50 S 0 8 3 Qrr 125ºC Irm 3 125ºC 4 1.5 125ºC S 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Charge and Peak Current vs. di/dt S 2 1 0.5 25ºC 0 200 2.5 6 25ºC 0 0 trr (ns) 6 2 10 / 11 25ºC 9 25ºC 4 Irm (A) Qrr (nC) trr 0 2 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 21: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.freescale.net.cn AON7932 30V Dual Asymmetric N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 11 / 11 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn