SHENZHENFREESCALE AOT27S60

AOT27S60/AOB27S60/AOTF27S60
600V 27A α MOS TM Power Transistor
General Description
TM
The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOS high voltage
process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
VDS @ Tj,max
700V
IDM
110A
RDS(ON),max
0.16Ω
Qg,typ
26nC
Eoss @ 400V
6µJ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT27S60/AOB27S60
Symbol
Drain-Source Voltage
600
VDS
Gate-Source Voltage
Continuous Drain
Current
TC=100°C
ID
27
Units
V
V
27*
17
17*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
7.5
A
Repetitive avalanche energy C
EAR
110
mJ
Single pulsed avalanche energy G
TC=25°C
Power Dissipation B Derate above 25oC
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
Junction and Storage Temperature Range
EAS
PD
110
480
50
W
2.9
0.4
W/ oC
100
20
-55 to 150
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
TL
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
Symbol
RθJA
mJ
357
dv/dt
RθCS
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1/6
±30
VGS
TC=25°C
AOTF27S60
V/ns
°C
300
°C
AOT27S60/AOB27S60
AOTF27S60
Units
65
65
°C/W
0.5
0.35
-2.5
°C/W
°C/W
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AOT27S60/AOB27S60/AOTF27S60
600V 27A α MOS TM Power Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ID=250µA, VGS=0V, TJ=25°C
600
-
-
ID=250µA, VGS=0V, TJ=150°C
650
700
-
V
µA
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
-
-
1
VDS=480V, TJ=150°C
-
10
-
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
-
-
±100
VGS(th)
Gate Threshold Voltage
VDS=5V,ID=250µA
2.5
3.3
4
nΑ
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=13.5A, TJ=25°C
-
0.14
0.16
Ω
VGS=10V, ID=13.5A, TJ=150°C
-
0.38
0.44
Ω
VSD
Diode Forward Voltage
IS=13.5A,VGS=0V, TJ=25°C
-
0.85
-
V
IS
Maximum Body-Diode Continuous Current
-
-
27
A
ISM
Maximum Body-Diode Pulsed Current
-
-
110
A
-
1294
-
pF
-
80
-
pF
-
69
-
pF
-
221
-
pF
VGS=0V, VDS=100V, f=1MHz
-
2.3
-
pF
VGS=0V, VDS=0V, f=1MHz
-
4.7
-
Ω
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Co(er)
Effective output capacitance, energy
related H
Crss
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Rg
Gate resistance
Co(tr)
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
-
26
-
nC
-
6.2
-
nC
Gate Drain Charge
-
8.8
-
nC
Turn-On DelayTime
-
31
-
ns
-
33
-
ns
-
99
-
ns
-
34
-
ns
IF=13.5A,dI/dt=100A/µs,VDS=400V
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
VGS=10V, VDS=480V, ID=13.5A
VGS=10V, VDS=400V, ID=13.5A,
RG=25Ω
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
-
440
-
ns
Irm
IF=13.5A,dI/dt=100A/µs,VDS=400V
-
28
-
Qrr
Body Diode Reverse Recovery Charge IF=13.5A,dI/dt=100A/µs,VDS=400V
-
7.5
-
A
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=4A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
2/6
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AOT27S60/AOB27S60/AOTF27S60
600V 27A α MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
55
10V
50
45
7V
40
35
30
5.5V
20
5.5V
15
20
15
6V
25
6V
25
7V
30
ID (A)
ID (A)
10V
35
10
5V
10
5V
5
VGS=4.5V
VGS=4.5V
5
0
0
0
5
10
15
0
20
5
10
15
20
VDS (Volts)
Figure 2: On-Region [email protected]°C
VDS (Volts)
Figure 1: On-Region [email protected]°C
1000
0.5
VDS=20V
-55°C
0.4
100
RDS(ON) (Ω )
125°C
ID(A)
10
1
25°C
VGS=10V
0.3
0.2
0.1
0.1
0.0
0.01
2
4
6
8
0
10
VGS(Volts)
Figure 3: Transfer Characteristics
30
40
50
60
1.2
2.5
VGS=10V
ID=13.5A
BVDSS (Normalized)
Normalized On-Resistance
20
ID (A)
Figure 4: On-Resistance vs. Drain Current and
Gate Voltage
3
2
1.5
1
1.1
1
0.9
0.5
0
-100
-50
0
50
100
150
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
3/6
10
200
0.8
-100
-50
0
50
100
150
200
TJ (oC)
Figure 6: Break Down vs. Junction Temperature
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AOT27S60/AOB27S60/AOTF27S60
600V 27A α MOS TM Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
1.0E+02
1.0E+01
12
125°C
VDS=480V
ID=13.5A
25°C
1.0E-01
9
VGS (Volts)
IS (A)
1.0E+00
1.0E-02
6
1.0E-03
3
1.0E-04
1.0E-05
0
0.0
0.2
0.4
0.6
0.8
1.0
0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
5
10
15
20
25
30
35
40
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
12
Ciss
Eoss(uJ)
Capacitance (pF)
10
1000
Coss
100
Eoss
8
6
4
Crss
10
2
0
1
0
100
200
300
400
500
VDS (Volts)
Figure 9: Capacitance Characteristics
200
300
400
VDS (Volts)
Figure 10: Coss stored Energy
500
600
100
100
RDS(ON)
limited
10
100µs
1
DC
0.1
10µs
10µs
1ms
10ms
ID (Amps)
ID (Amps)
100
1000
1000
10
RDS(ON)
limited
100µs
1ms
1
10ms
0.1s
1s
DC
0.1
TJ(Max)=150°C
TC=25°C
0.01
TJ(Max)=150°C
TC=25°C
0.01
1
10
100
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)27S60 (Note F)
4/6
0
600
1000
0.1
1
10
100
1000
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF27S60(Note F)
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AOT27S60/AOB27S60/AOTF27S60
600V 27A α MOS TM Power Transistor
500
30
400
25
Current rating ID(A)
EAS(mJ)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
200
20
15
10
100
5
0
0
25
50
75
100
125
TCASE (°C)
Figure 13: Avalanche energy
150
175
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note B)
150
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.35°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOT(B)27S60 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF27S60 (Note F)
5/6
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AOT27S60/AOB27S60/AOTF27S60
600V 27A α MOS TM Power Transistor
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
6/6
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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