AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features ID (at VGS=10V) 800V@150℃ 9A RDS(ON) (at VGS=10V) < 1.2Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT9N70 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C ID AOTF9N70L ±30 Units V V 9 9* 9* 5.8 5.8* 5.8* A Pulsed Drain Current C IDM 33 Avalanche Current C IAR 3.2 A Repetitive avalanche energy C EAR 77 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC EAS dv/dt 154 5 50 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TJ, TSTG A PD 236 1.8 TL Symbol RθJA RθCS Maximum Case-to-sink Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/6 AOTF9N70 700 0.4 -55 to 150 27.8 0.22 300 W/ oC °C °C AOT9N70 65 AOTF9N70 65 AOTF9N70L 65 Units °C/W 0.5 0.53 -2.5 -4.5 °C/W °C/W www.freescale.net.cn AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 800 V ID=250µA, VGS=0V 0.84 V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A gFS Forward Transconductance VDS=40V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.9 4.5 nΑ V 0.94 1.2 Ω 10 V Maximum Body-Diode Continuous Current 9 A Maximum Body-Diode Pulsed Current 33 A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=560V, ID=9A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time 0.74 S 1 DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 3 µA 1085 1357 1630 pF 90 113 147 pF 6 7.4 11 pF 2 4 6 Ω 23 28.5 35 nC 5.5 6.8 8.2 nC 9.3 11.6 18 nC VGS=10V, VDS=350V, ID=9A, RG=25Ω 35 ns 61 ns 76 ns 48 IF=9A,dI/dt=100A/µs,VDS=100V ns 300 375 450 6 7.5 9 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=30mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/6 www.freescale.net.cn AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 18 100 10V VDS=40V 15 6.5V 9 10 ID(A) ID (A) 12 -55°C 6V 125°C 1 6 25°C 3 VGS=5.5V 0.1 0 0 5 10 15 20 25 2 30 4 VDS (Volts) Fig 1: On-Region Characteristics 3.0 8 10 Normalized On-Resistance 3 2.5 2.0 RDS(ON) (Ω Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 1.5 1.0 VGS=10V 0.5 2.5 VGS=10V ID=4.5A 2 1.5 1 0.5 0 0.0 -100 0 4 8 12 16 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 TJ (°C) Figure 5:Break Down vs. Junction Temparature 3/6 200 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 1000 Capacitance (pF) VGS (Volts) Ciss VDS=560V ID=9A 12 9 6 Coss 100 10 3 Crss 0 1 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics RDS(ON) limited ID (Amps) 1 1ms DC 10ms 100µs 1 1ms 10ms DC 0.1 0.1s TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 1s 0.01 0.01 1 10 100 VDS (Volts) 1000 1 10000 10 100 VDS (Volts) 1000 10000 Figure 10: Maximum Forward Biased Safe Operating Area for AOTF9N70 (Note F) Figure 9: Maximum Forward Biased Safe Operating Area for AOT9N70 (Note F) 100 10 RDS(ON) limited Current rating ID(A) 10µs 10 ID (Amps) 10µs RDS(ON) limited 10 10µs 100µs 0.1 100µs 1 1ms 10ms DC 0.1s 0.1 8 6 4 2 TJ(Max)=150°C TC=25°C 1s 0 0.01 1 10 100 VDS (Volts) 1000 Figure 11: Maximum Forward Biased Safe Operating Area for AOTF9N70L (Note F) 4/6 100 100 10 ID (Amps) 0.1 10000 0 25 50 75 TCASE (°C) 100 125 150 Figure 12: Current De-rating (Note B) www.freescale.net.cn AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.53°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOT9N70 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF9N70 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF9N70 L(Note F) 5/6 www.freescale.net.cn AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn