AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS ID (at VGS=10V) 600V@150℃ 22A RDS(ON) (at VGS=10V) < 0.26Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT22N50 Drain-Source Voltage VDS 500 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C ID Units V V 22 22* 15 15* A Pulsed Drain Current C IDM Avalanche Current C IAR 7 A Repetitive avalanche energy C EAR 735 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 1470 5 mJ V/ns W PD 88 417 50 3.3 0.4 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. 1/6 AOTF22N50 AOT22N50 65 AOTF22N50 65 Units °C/W 0.5 0.3 -2.5 °C/W °C/W www.freescale.net.cn AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 V ID=250µA, VGS=0V 0.57 V/ oC VDS=500V, VGS=0V 1 VDS=400V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A gFS Forward Transconductance VDS=40V, ID=11A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS ISM 4 4.5 nΑ V 0.21 0.26 Ω S 1 V Maximum Body-Diode Continuous Current 22 A Maximum Body-Diode Pulsed Current 88 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss ±100 3.4 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2465 3086 3710 pF VGS=0V, VDS=25V, f=1MHz 200 290 380 pF 14 24 35 pF VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω 55 69 83 nC 17 22 27 nC 12 24 36 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=22A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=22A,dI/dt=100A/µs,VDS=100V 415 524 630 Qrr Body Diode Reverse Recovery Charge IF=22A,dI/dt=100A/µs,VDS=100V 7.5 9.6 12 Body Diode Reverse Recovery Time VGS=10V, VDS=250V, ID=22A, RG=25Ω 60 ns 122 ns 124 ns 77 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=7A, VDD=150V, RG=25Ω, Starting TJ=25°C 2/6 www.freescale.net.cn AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 40 VDS=40V 10V 30 6.5V 20 -55°C ID(A) ID (A) 10 6V 125°C 1 10 VGS=5.5V 25°C 0 0.1 0 5 10 15 20 25 30 0 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 0.4 Normalized On-Resistance 3 0.3 RDS(ON) (Ω Ω) 10 VGS=10V 0.2 0.1 VGS=10V ID=11A 2.5 2 1.5 1 0.5 0 0.0 0 5 10 15 20 -100 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 1.0E-04 -100 -50 0 50 100 150 200 TJ (° °C) Figure 5:Break Down vs. Junction Temparature 3/6 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 Ciss VDS=400V ID=22A Capacitance (pF) VGS (Volts) 12 9 6 1000 Coss Crss 100 3 0 10 0 20 40 60 80 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0.1 100 100 10µs RDS(ON) limited 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 10µs RDS(ON) limited 100µs 10 100µs 1ms 10 10ms DC 10ms 1 0.1 ID (Amps) 1ms ID (Amps) 100 0.1s 1s 1 DC 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT22N50 (Note F) 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF22N50 (Note F) Current rating ID(A) 25 20 15 10 5 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 11: Current De-rating (Note B) 4/6 www.freescale.net.cn AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PPDD 0.01 TTonon Single Pulse TT 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT22N50 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PPDD 0.01 TTonon Single Pulse TT 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF22N50 (Note F) 5/6 www.freescale.net.cn AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn