SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.022 RDS(on) () at VGS = 4.5 V 0.033 ID (A) FEATURES • Halogen-free According to IEC 61249-2-21 Definition 25 Configuration Single • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested D TO-252 • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD25N06-22L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 25 20 IS 25 IDM 100 IAS 24 EAS 28 PD UNIT 62 20 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 2.4 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (Fr-4 material). d. Parametric verification ongoing. 1/9 www.freescale.net.cn SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage 60 - - 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA IGSS Zero Gate Voltage Drain Current Transconductancea VDS VGS(th) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 60 V - - 1.0 VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 25 - - VGS = 10 V ID = 20 A - 0.018 0.022 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.039 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.049 VGS = 4.5 V ID = 20 A, TJ = 25 °C - 0.027 0.033 - 32 - - 1580 1975 - 305 382 - 130 163 VDS = 15 V, ID = 12 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 30 V, ID = 25 A f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 1.2 ID 25 A, VGEN = 10 V, Rg = 1 tf - 33 50 - 5.3 - - 6.8 - 1.1 2.2 3.3 - 8 12 pF nC - 10 15 - 24 36 - 6 9 - - 100 A - 0.9 1.5 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 25 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/9 www.freescale.net.cn SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 VGS = 10 V thru 5 V 24 ID - Drain Current (A) ID - Drain Current (A) 24 18 VGS = 4 V 12 18 TC = 125 °C 12 25 °C 6 6 VGS = 3 V - 55 °C 0 0 0 2 4 6 8 0 10 2 4 6 8 VDS - Drain-to Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 0.10 50 40 RDS(on) - On-Resistance () gfs - Transconductance (S) TC = - 55 °C 25 °C 30 125 °C 20 10 0.08 0.06 0.04 VGS = 4.5 V 0.02 VGS = 10 V 0 0 0 6 12 18 24 30 0 6 12 ID - Drain Current (A) 80 ID = 12 A VDS - Drain-to-Source Voltage (V) ID = 10 mA 2.1 RDS(on) - On-Resistance (Normalized) 30 On-Resistance vs. Drain Current 2.5 VGS = 10 V 1.7 VGS = 4.5 V 1.3 0.9 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3/9 24 ID - Drain Current (A) Transconductance 0.5 - 50 18 175 76 72 68 64 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature www.freescale.net.cn SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.25 100 TJ = 150 °C 0.20 1 RDS(on) - On-Resistance IS - Source Current (A) 10 TJ = 25 °C 0.1 0.15 0.10 0.01 0.05 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3000 10 ID = 25 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 2500 2000 Ciss 1500 1000 Coss 500 Crss 0 0 8 VDS = 30 V 6 4 2 0 10 20 30 40 50 0 60 5 V DS - Drain-to-Source Voltage (V) 10 15 20 25 30 Qg - Total Gate Charge (nC) Capacitance Gate Charge 0.6 VGS(th) - Variance (V) 0.3 0 - 0.3 ID = 5 mA - 0.6 ID = 250 µA - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) Threshold Voltage 4/9 www.freescale.net.cn 35 SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 ID - Drain Current (A) Limited by RDS(on)* 10 100 µs ID Limited 1 ms 10 ms 100 ms 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5/9 www.freescale.net.cn SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6/9 www.freescale.net.cn SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 7/9 www.freescale.net.cn 0.410 SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8/9 Return to Index www.freescale.net.cn SQD25N06-22L Automotive N-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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