SUD45P03-09 P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0087 at VGS = - 10 V - 45d 0.0150 at VGS = - 4.5 V - 32 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) 60 APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters TO-252 S G Drain Connected to Tab G D S D Top View Ordering Information: SUD45P03-09-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage Parameter VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 °C Operating Junction and Storage Temperature Range c ID V - 45d - 42.5 IDM - 100 IAS - 35 EAS 61 PD Unit 41.7 A mJ b 2.1 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit RthJA 60 RthJC 3 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. 1/8 www.freescale.net.cn °C/W SUD45P03-09 P-Channel 30 V (D-S) MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 30 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS - 2.5 ± 250 VDS = - 30 V, VGS = 0 V 1 VDS = - 30 V, VGS = 0 V, TJ = 125 °C 50 VDS = - 30 V, VGS = 0 V, TJ = 150 °C 250 VDS ≤ - 10 V, VGS = - 10 V ID(on) RDS(on) gfs - 50 V nA µA A VGS = - 10 V, ID = - 20 A 0.0072 0.0087 VGS = - 4.5 V, ID = - 15 A 0.0125 0.0150 VDS = - 15 V, ID = - 20 A 45 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 445 60 VDS = - 15 V, VGS = - 10 V, ID = - 20 A Turn-On Delay Timec Rise Timec Fall Timec f = 1 MHz td(on) tr c td(off) 90 nC 9.3 15 Rg Gate Resistance pF 515 Qgd Gate-Drain Charge Turn-Off Delay Time 2700 VGS = 0 V, VDS = - 15 V, f = 1 MHz VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.5 5 12 20 11 20 40 60 12 20 - 45 Pulsed Current ISM - 100 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Qrr A IF = - 10 A, VGS = 0 V - 0.8 - 1.5 V 27 40 ns IF = - 10 A, dI/dt = 100 A/µs 1.3 2 A 20 30 nC trr IRM(REC) ns b IS Continuous Current Ω Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/8 www.freescale.net.cn SUD45P03-09 P-Channel 30 V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.020 I D - Drain Current (A) 60 R DS(on) - On-Resistance (Ω) VGS = 10 V thru 5 V 80 VGS = 4 V 40 20 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 VGS = 3 V 0 0.0 0.000 0.5 1.0 1.5 2.0 2.5 0 20 40 Output Characteristics 4 0.04 R DS(on) - On-Resistance (Ω) 0.05 3 2 TC = 25 °C 1 0.03 0.02 TJ = 150 °C 0.01 TC = 125 °C TJ = 25 °C TC = - 55 °C 0 1 2 3 0.00 2 4 6 8 VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 10 ID = 20 A VGS - Gate-to-Source Voltage (V) TC = - 55 °C g fs - Transconductance (S) 4 VGS - Gate-to-Source Voltage (V) 75 60 TC = 25 °C 45 TC = 125 °C 30 15 8 VDS = 15 V 6 VDS = 8 V VDS = 24 V 4 2 0 0 0 3/8 100 On-Resistance vs. Drain Current 5 0 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) 60 10 20 30 40 50 0 20 40 60 ID - Drain Current (A) Qg - Total Gate Charge (nC) Transconductance Gate Charge www.freescale.net.cn 80 SUD45P03-09 P-Channel 30 V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted - 1.0 100 VGS(th) (V) I S - Source Current (A) - 1.3 TJ = 150 °C 10 TJ = 25 °C ID = 250 µA - 1.6 1 - 1.9 0.1 0.0 0.3 0.6 0.9 - 2.2 - 50 1.2 0 25 50 75 VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 4000 100 125 150 100 125 150 VDS - Drain-to-Source Voltage (V) - 33 Ciss 3000 C - Capacitance (pF) - 25 2000 1000 Coss Crss 0 0 5 10 15 20 25 ID = 250 µA - 34 - 35 - 36 - 37 - 50 30 - 25 0 25 50 75 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Capacitance Drain Source Breakdown vs. Junction Temperature 60 1.8 ID = 20 A I D - Drain Current (A) (Normalized) R DS(on) - On-Resistance VGS = 10 V 1.5 1.2 VGS = 4.5 V 4/8 Package Limited 30 15 0.9 0.6 - 50 45 0 - 25 0 25 50 75 100 125 150 0 25 50 75 100 TJ - Junction Temperature (°C) TC - Case Temperature (°C) On-Resistance vs. Junction Temperature Current Derating 125 www.freescale.net.cn 150 SUD45P03-09 P-Channel 30 V (D-S) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 Limited by RDS(on)* TJ = 25 °C TJ = 150 °C 10 I D - Drain Current (A) I DAV (A) 100 100 µA 10 1 ms 10 ms, 100 ms 1 s, 10 s, DC 1 TA = 25 °C Single Pulse 0.1 1 10-5 10-4 10-3 10-2 10-1 0.01 0.1 1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case 5/8 www.freescale.net.cn 30 SUD45P03-09 P-Channel 30 V (D-S) MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 6/8 www.freescale.net.cn 0.410 SUD45P03-09 P-Channel 30 V (D-S) MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 7/8 Return to Index www.freescale.net.cn SUD45P03-09 P-Channel 30 V (D-S) MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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