E L E C T R O N I C SB240ESH ~ SB2200ESH Power Schottky Rectifier - 2Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction -Halogen-Free □ Mechanical data -Case：Molded plastic -Epoxy：UL 94V-0 rate flame retardant -Lead：Axial leads, solderable per MIL-STD-202,method 208 guaranteed -Polarity：Color band denotes cathode end -Mounting position：Any -Weight：0.4 grams □ Maximum ratings and Electrical characteristics Parameters SB240ESH SB260ESH SB2100ESH SB2150ESH SB2200ESH UNIT Maximum Recurrent Peak Reverse Voltage 40 60 100 150 200 V Maximum RMS Voltage 28 42 70 105 140 V Maximum DC Blocking Voltage 40 60 100 150 200 V Maximum Average Forward Rectified Current 2 A Peak Forward Surge Current 50 A Maximum Instantaneous Forward Tc = 25ºC 0.55 0.65 0.82 0.88 0.90 Voltage at 2A Tc = 125ºC 0.44 0.50 0.66 0.69 0.72 Maximum Average Reverse Current Tc = 25ºC 0.5 0.05 at Rated DC Blocking Voltage Tc = 125ºC 20 10 V mA Typical Junction Capacitance 150 pF Typical Thermal Resistance RθJA 50 ºC/W Operating and Storage Temperature Range -50 to +150 -50 to +175 ºC June 2010 / Rev.6.6 http:// www.sirectsemi.com 1 H ES 00 21 SB 1.6 1.2 – H ES 00 22 SB H – 0E 26 SB 0.8 SH 0.4 PEAK FORWARD SURGE CURRENT AMPERES 2.0 S 0E 24 SB AVERAGE FORWARD CURRENT AMPERES SB240ESH ~ SB2200ESH 0 25 50 75 100 125 150 175 50 40 30 20 10 0 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 1 2 Figure 1. Forward Current Derating Curve 10 20 50 100 Figure 2. Maximum Non-repetitive Surge Current 100 10 1 0ES SB24 H– 0ESH SB26 0.1 0.01 H 00ES SB21 –S 0 B220 ESH 0.001 10 SB 24 0E SB SB SH 26 21 0E 00 SB ES SH 21 H 50 ES H SB 22 00 ES H INSTANTANEOUS FORWARD CURRENT, (A) 100 INSTANTANEOUS REVERSE CURRENT, (mA) 5 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE (ºC) 1.0 0.1 0 20 40 60 80 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) INSTANTANEOUS FORWARD VOLTAGE, VOLTS Figure 3. Typical Reverse Characteristics Figure 4. Typical Forward Characteristics 0.9 CAPACITANCE, (pF) 1000 100 TJ = 25ºC f = 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE, VOLTS Figure 5. Typical Junction Capacitance Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com 2 SB240ESH ~ SB2200ESH SB240ESH~SB2200ESH .205(5.2) .166(4.2) 1.04(26.5) .94(23.9) DO-41 K 1.04(26.5) .94(23.9) .107(2.7) .080(2.0) A .034(0.9) .028(0.7) http:// www.sirectsemi.com 3