DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array General Description Features The AAT2491 is a monolithically integrated dual N-channel high-voltage cascode-clamp lateral TrenchDMOS array. The dual-channel AAT2491 monolithically integrates both current-sink (CS) and high-voltage cascode-clamp (CC) power MOSFETs required for reliably driving a large series string of LEDs as used in a variety of lighting and display backlight applications. • Low-Voltage Current Sink TrenchDMOS ▪ Low RDS(ON) for Low Dropout Operation •1.5Ω @ VGS = 5V (typical) • High-Voltage Cascode-Clamp TrenchDMOS ▪ BVDSS(MAX) = 150V ▪ Low RDS(ON) •5Ω @ VGS = 12V (typical) • Up to 240mA per channel at TA = 25°C • 16-pin SOP-EP, 1.27mm Pitch Package • -40°C to +85°C Temperature Range The AAT2491’s low-voltage current-sink (CS) device, required for closed-loop current control in large panel LED driver applications, is constructed using Skyworks' robust lateral TrenchDMOS process featuring superior hot carrier performance needed for reliable constantcurrent operation. It has a low on resistance, typically 1.5Ω, facilitating constant current operation over a wide dynamic range. The low-voltage current-sink Lateral TrenchDMOS process features a low threshold voltage (VGS(ON)) and can be driven directly from a 5V supply. Applications LCD TV Panels LCD Monitors White LED Backlighting High-Voltage LED Lighting The high-voltage cascode-clamp TrenchDMOS device has a drain-to-source voltage rating of 150V. With a 12V gate drive, it exhibits a typical on-resistance of 5Ω. In high-voltage LED backlighting applications for TVs and large-screen LCD panels, the AAT2491 TrenchDMOS array allows control of two series strings of LEDs with up to 40 LEDs per string. Each series connected TrenchDMOS pair comprises a current sink device with its gate actively driven by a backlight driver IC (such as the AAT2430A-1 or the AAT2405). To facilitate direct temperature measurement of the AAT2491 in a system, a series connected string of P-N junction diodes is included with both anode and cathode connections available separate from the supply. The AAT2491 is available in a Pb-free, 16-pin SOP-EP package with 1.27mm pin pitch. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 1 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Typical Application Circuit1 VLED VIN 1nF CS_D1 VIN VCC 1nF CS_G1 CS_S1 1nF 1nF 1nF 1nF 1nF 1nF CS_D2 CS_G2 CS_S2 AAT2491 CS_D3 EN ADDR AAT2430A-1 CS_D4 CS_G4 CS_S4 SDO AAT2491 CS_D5 SCLK SPI Bus Interface CS_G3 CS_S3 CS_G5 CS_S5 SDI CSB CS_D6 CS_G6 CS_S6 Vertical Sync / GS Clock Input VSYNC GSCLK CS_D7 Current Sense Feedback I/O CSFBI CS_G7 CS_S7 CSFBO AAT2491 CS_D8 CS_G8 CS_S8 AAT2491 CS_D9 CS_G9 CS_S9 RSET CS_D10 CS_G10 CS_S10 AAT2491 CS_D11 CS_G11 CS_S11 CS_D12 CS_G12 CS_S12 AAT2491 CS_D13 CS_G13 CS_S13 CS_D14 +5V CS_G14 CS_S14 AAT2491 CS_D15 Fault Output CS_G15 CS_S15 FLT CS_D16 CS_G16 CS_S16 GND SGND SGND 1. Simplified for clarity. 2 Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 AAT2491 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Pin Descriptions Pin # Symbol Function 1 CD1 I 2 CG I 3 4 5 6 7 8, 10, 12, 16 9 11 13 14 15 EP CD2 CS_D2 OT_E OT_B CS_S2 NC CS_G2 GND CS_D1 CS_S1 CS_G1 EP I O I/O I/O O Description Voltage clamp MOSFET 1 drain. Voltage clamp MOSFET common gate drive. Bypass with 1nF ceramic capacitor to ground. Voltage clamp MOSFET 2 drain. Current sink MOSFET 2 sense. Cathode connection to temperature PN diode. Anode connection to temperature PN diode. Current sink MOSFET 2 controlled current sink. Not connected. Current sink MOSFET 2 gate drive. General ground pin. Current sink MOSFET 1 sense. Current sink MOSFET 1 controlled current sink. Current sink MOSFET 1 gate drive. Exposed paddle. Connect to PCB GND plane. I GND O O I GND Pin Configuration SOP-EP-16 (Top View) 1 16 NC CG 2 15 CS_G1 CD2 3 14 CS_S1 CS_D2 4 13 CS_D1 OT_E 5 12 NC OT_B 6 11 GND CS_S2 7 10 NC NC 8 9 CS_G2 EP CD1 Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 3 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Absolute Maximum Ratings1 TA = 25OC unless otherwise noted. Symbol Description High Voltage Cascode MOSFET Voltage Clamp MOSFET Drain Voltage VCD1, VCD2 Voltage Clamp MOSFET Common Gate Driver Voltage VCG Low Voltage Current Sink MOSFET VGS Gate-Source Voltage Both Continuous current @ TJ = 150°C2,3, two channels in parallel4 ID θJA Thermal Resistance5,6 PD Maximum Power Dissipation5,6 TJ Maximum Junction Operating Temperature Maximum Soldering Temperature (at leads, 10 sec.) TLEAD Temperature Sense Diode String Vf Diode Reverse Bias Voltage Value Units 150 to -0.3 15 to -0.3 V 15 to -0.3 V 480 52.0 2.4 -40 to +150 300 mA °C/W W 5.5 to -0.3 V °C 1. Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional operation at conditions other than the operating conditions specified is not implied. 2. Based on long-term current density limitation. 3. Both MOSFETS in parallel. 4. The test condition is VCG=VCS_Gx=12V, VCD1=VCD2=5V, in the case when the VCDx voltage is differ from 5V, the ID(max) value can be obtained from VCDx x ID(max) =2.4W at TA=25°C 5. The thermal data is extracted from a 2-layer FR4 board. 6. The thermal resistance measured in accordance with EIA/JESD 51 series. 4 Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Electrical Characteristics TJ = 25°C unless otherwise noted. Symbol Description Conditions Min VCG = 12V, VCS_G = VCS_S = 0V, ICD = 10μA 150 Typ Max 12 13.2 Units High Voltage Cascode MOSFET BVDSS Drain-Source Breakdown Voltage VCG Operating CG Pin Voltage Range RDS(ON) Drain-Source ON Resistance1 VGS(th) Gate Threshold Voltage IGSS IDSS Gate Leakage Current Drain-Source Leakage Current gfs Forward Transconductance 5 VCG = 10V, VCS_D = 0V, ICD = 150mA VCG = VCD, VCS_D = 0V, ICD = 250μA VCG = 12V, VCD = VCS_D = 0V VCD = 100V, VCG = VCS_D = 0V VCD = 25V, VCS_D = 0V, ICD = 150mA 1.1 V 5 Ω 1.8 V 100 1 0.3 Low Voltage Current Sink MOSFET VCS_Gx Recommended Operating Voltage VGS Range RDS(ON) Drain-Source ON Resistance1 ID(ON) On-State Drain Current1 VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current IDSS Drain-Source Leakage Current gfs Forward Transconductance Temperature Sense Diode String Vf Forward Bias Voltage Delta Forward Bias Voltage (VF @150°C - VF Vf @25°C) S 14 VCS_G = 5V, VCS_S = 0V, ICS_D = 150mA VCS_G = 5V, VCS_S = 0V, VCS_D = 5V VCS_G = VCS_D, VCS_S = 0V, ICS_D = 250μA VCS_G = 12V, VCS_D = VCS_S = 0V VCG =12V, VCD =100V VCS_G = VCS_S = 0V VCS_D = 5V, VCS_S = 0V, ICS_D = 150mA nA μA 1.5 V Ω 200 mA 1.6 V 100 nA 1 μA 0.45 S I = 300μA 3.08 V I = 300μA 680 mV 1. Pulse test: Pulse width = 300μs. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 5 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Typical Characteristics (High Voltage Cascode MOSFET) Transfer Characteristics Output Characteristics 0.25 0.2 0.23 0.175 0.20 0.15 VGS = 2 VGS = 2.5 VGS = 3 VGS = 3.5 VGS = 4 VGS = 5 VGS = 6 VGS = 7 VGS = 8 VGS = 9 VGS = 10 0.15 0.13 0.10 0.08 0.05 0.125 ID (A) IDS (A) 0.18 0.075 -55°C 0.05 25°C 125°C 0.025 0.03 0.00 0.1 0 1 2 3 4 5 6 7 8 9 0 10 0 1 2 On-Resistance vs Gate-Source Voltage 10 20 9 18 8 16 7 14 RDS(ON) (Ω) RDS(ON) (Ω) On-Resistance vs Drain Current 6 5 4 3 2 1 12 10 ID = 150mA 8 VGS=5V 6 VGS=10V 4 2 0 0 0.05 0.1 0.15 0.2 0 0.25 0 1 2 3 4 ID (A) 6 7 8 9 Threshold Voltage vs Junction Temperature 0.4 1.6 VGS = 10V 1.4 ID = 150mA 0.3 VGS(TH) Variance (V) 1.5 1.3 1.2 1.1 1.0 0.9 0.1 0 -0.1 -0.2 -0.3 0.7 -0.4 -50 -25 0 25 50 75 100 125 ID = 250μA 0.2 0.8 0.6 -50 5 VGS (V) On-Resistance vs Junction Temperature -25 0 25 50 75 100 TJ (°C) TJ (°C) 6 4 VGS (V) VDS (V) Normalized RDS(ON) 3 Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 125 10 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Typical Characteristics (Low Voltage Cascode MOSFET) Output Characteristics 0.25 0.25 VGS = 2 VGS = 2.5 VGS = 3 VGS = 3.5 VGS = 4 VGS = 6 VGS = 7 VGS = 8 VGS = 10 0.20 0.18 0.15 0.13 0.10 0.225 -55°C 0.2 25°C 0.175 ID (A) 0.23 IDS (A) Transfer Characteristics 125°C 0.15 0.125 0.1 0.075 0.08 0.05 0.05 0.03 0.025 0 0.00 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 6 1 2 VDS (V) VGS (V) On-Resistance vs Gate-Source Voltage On-Resistance vs Drain Current 4 10 3.5 ID = 150mA 8 2.5 RDS(ON) (Ω) 3 RDS(ON) (Ω) 3 VGS = 5V 2 VGS = 10V 1.5 1 6 4 2 0.5 0 0 0.05 0.1 0.15 0.2 0 0.25 0 1 2 3 4 5 ID (A) 0.4 ID=150mA VGS(TH) Variance (V) Normalized RDS(ON) 9 10 0.5 VGS=5V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 8 Threshold Voltage vs Junction Temperature 1.6 1.4 7 VGS (V) On-Resistance vs Junction Temperature 1.5 6 ID = 250μA 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -25 0 25 50 TJ (°C) 75 100 125 -0.5 -50 -25 0 25 50 75 100 125 TJ (°C) Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 7 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Typical Characteristics (Low Voltage Cascode MOSFET) Source-Drain Diode Forward Voltage IS (A) 1.00 0.10 25°C 125°C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) Typical Characteristics (Temperature Sense Diode String) Forward Voltage vs Junction Temperature Forward Voltage (V) 3.4 3.2 3 2.8 2.6 2.4 2.2 2 25 45 65 85 105 125 145 TJ (°C) 8 Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Functional Block Diagram CD1 CD2 ● ● OT_B Temp Sensor OT_E CG1,2 ● CS_D1 ● ● CS_D2 CS_G1 ● CS_S1 ● CS_G2 CS_S2 GND Functional Description The AAT2491 is a dual cascode-clamp current sink MOSFET used to both protect and control the current in a series string of LEDs used in LCD backlighting applications. Replacing four discrete transistors, the AAT2491 comprises four lateral TrenchDMOS transistors in a popular SOP-EP-16 package with 1.27mm pin pitch. The AAT2491 utilizes lateral TrenchDMOS transistors, which are avalanche-rugged, robust power devices, fabricated using Skyworks' patented ModularBCD process technology to integrate the transistor array. Lateral TrenchDMOS transistors exhibit hot carrier reliability superior to conventional surface MOSFET devices. All gate pins include ESD protection diodes but to avoid possible damage by a surge voltage on the high voltage cascode-clamp MOSFET gate, it is recommended to put a 1kΩ, or greater, series resistor between the power supply and the gate pin. (In case of using resistor divider to supply the voltage for the gate bias, the upper resistance will work as a series resistance.) The CG pin is also required to have a bypass capacitor (greater than or equal to 1nF) to the ground. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 9 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array In high-voltage LED backlighting applications, the low side TrenchDMOS devices of the AAT2491 are normally used as part of a linear control and feedback circuit to regulate the current in each series string of LEDs according to the gate bias supplied by an LED driver integrated circuit (such as the AAT2430A-1 or the AAT2405). Since the source connections of the low side TrenchDMOS devices are separate from ground, the device is compatible with current sensing using either discrete sense resistors or I-Precise™ current monitoring and gate drive available in Skyworks' products, for improved accuracy. The high-side cascode clamp TrenchDMOS devices are used to protect an LED driver IC from the high voltages present in HV LED backlighting systems. Such high voltages, generally ranging from 50V up to 150V, are needed for forward biasing LED strings having many series connected LEDs. During operation, most of this high voltage is dropped across the conducting LEDs and not across the silicon transistors driving the LEDs. When the LEDs are not conducting (or conducting low currents) or when one or more LEDs become shorted, a disproportionate amount of the voltage is impressed on the driver devices. Without the cascode-clamp, the current sink transistors may be permanently damaged. Using cascode clamping, i.e. where a high voltage MOSFET is operated as a voltage follower, the maximum voltage impressed on any current sink device is safely limited. In such an application, each cascode clamp 10 TrenchDMOS device has its gate biased to a fixed voltage VG(CLAMP) with its drain connected to the LED string and its source prewired in series with the current sink device. As the drain voltage rises in normal operation, the high-side transistor’s source voltage VS follows until the source voltage reaches a potential approximately one VT (one threshold) below the fixed gate bias voltage, or VG(CLAMP) – VT. Above that potential, further drain voltage increases will not drive the source voltage any higher. For example if the gate is biased to 12V, the source can be driven to a potential no higher than 10V, thereby clamping the drain voltage of the low-side current sink to within safe operation range. It is required to put a 1nF bypass capacitor connected from CG pin to ground. The AAT2491 includes a series string of four P-N junction diodes for monitoring die temperature. To facilitate simple, over-temperature monitoring, the diode string should be forward biased by a constant current or a resistor to approximately 300μA. The voltage of the conducting diode string can easily be monitored with a comparator to determine if an over-temperature condition has occurred, specifically where the diode voltage drops below a pre-specified value. A characterization curve comparing the diode string forward voltage to temperature is included for reference. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Ordering Information Package Marking1 Part Number (Tape and Reel)2 SOP-EP-16 FAYW AAT2491IAN-T1 Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Package Information3 SOP-EP-16 All dimensions in millimeters. 1. FAYW = Fab, Assembly, Year and Week code. 2. Sample stock is generally held on part numbers listed in BOLD. 3. The leadless package family, which includes QFN, TQFN, DFN, TDFN and STDFN, has exposed copper (unplated) at the end of the lead terminals due to the manufacturing process. A solder fillet at the exposed copper edge cannot be guaranteed and is not required to ensure a proper bottom solder connection. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012 11 DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array Copyright © 2012 Skyworks Solutions, Inc. All Rights Reserved. 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Additional information, including relevant terms and conditions, posted at www.skyworksinc.com, are incorporated by reference. 12 Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 201934A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • May 7, 2012