VISHAY EDF1DS

New Product
EDF1AS thru EDF1DS
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
~
• Ultrafast reverse recovery time for high
frequency
~
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 250 °C
~
• Solder dip 260 °C, 40 s
~
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style DFS
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
PRIMARY CHARACTERISTICS
IF(AV)
1A
VRRM
50 V to 200 V
IFSM
50 A
IR
5 µA
VF
1.05 V
trr
50 ns
TJ max.
150 °C
MECHANICAL DATA
Case: DFS
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AS
EDF1BS
EDF1CS
EDF1DS
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
106
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward output rectified
current at TA = 40 °C (1)
IF(AV)
1.0
A
Peak forward surge current single half sine-wave
superimposed on rated load
IFSM
50
A
I2t
10
A2 s
TJ, TSTG
- 55 to + 150
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Note:
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
Document Number: 88578
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Ame[email protected], [email protected], [email protected]
www.vishay.com
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New Product
EDF1AS thru EDF1DS
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
EDF1AS
EDF1BS
EDF1CS
EDF1DS
UNIT
Maximum instantaneous forward
voltage drop per diode
1.0 A (1)
VF
1.05
V
Maximum DC reverse current at rated
DC blocking voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
1.0
µA
mA
Maximum reverse recovery time
per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
50
ns
Note:
(1) Pulse test: 300 ms pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AS
EDF1BS
EDF1CS
RθJA
RθJL
Typical thermal resistance (1)
EDF1DS
38
12
UNIT
°C/W
Note:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
EDF1DS-E3/45
0.406
45
50
Tube
EDF1DS-E3/77
0.406
77
1500
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
60
IPK/IAV = π Resistive
or Inductive Load
0.75
0.51 x 0.51" (13 x 13 mm)
Copper Pads
0.5
0.25
Capacitive
Loads
5.0
Ipk
= 10
IAV
20
Peak Forward Surge Current (A)
Average Forward Output Current (A)
1.0
TJ = 150 °C
Single Sine-Wave
50
40
30
20
10
1.0 Cycle
0
0
20
40
60
80
100
120
140
160
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Derating Curves Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 88578
Revision: 30-Jan-08
New Product
EDF1AS thru EDF1DS
Vishay General Semiconductor
30
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
25
20
15
10
5
0
0.6
0.8
1.0
1.2
1.4
0.1
10
1
100
1000
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Instantaneous Reverse Leakage
Current (µA)
1000
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFS
Mounting Pad La yout
0.205 (5.2)
0.195 (5.0)
0.047 (1.20)
0.040 (1.02)
0.047 MIN.
(1.20 MIN.)
0.404 MAX.
(10.26 MAX.)
0.060 MIN.
(1.52 MIN.)
0.404 (10.3)
0.386 (9.80)
0.335 (8.51)
0.320 (8.13)
45°
0.255 (6.5)
0.245 (6.2)
0.130 (3.3)
0.120 (3.05)
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
Document Number: 88578
Revision: 30-Jan-08
0.205 (5.2)
0.195 (5.0)
0.013 (0.330)
0.003 (0.076)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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