VS-12TTS08SPbF High Voltage Series Vishay Semiconductors Phase Control SCR, 8 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition 1 Cathode D2PAK • Designed and qualified for industrial level 3 Gate APPLICATIONS • Input rectification and crow-bar (soft start) • Vishay input diodes, switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY VT at 8 A < 1.2 V DESCRIPTION ITSM 140 A VRRM 800 V The VS-12TTS08SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 13.5 17 A Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS Sinusoidal waveform IT(AV) VALUES UNITS 8 A IT(RMS) 12.5 VRRM/VDRM 800 V ITSM 140 A 1.2 V dV/dt 150 V/μs dI/dt 100 A/μs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA 800 800 1.0 8 A, TJ = 25 °C VT Range TJ VOLTAGE RATINGS PART NUMBER VS-12TTS08SPbF Document Number: 94499 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-12TTS08SPbF High Voltage Series Vishay Semiconductors Phase Control SCR, 8 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current Maximum RMS on-state current Maximum peak one-cycle non-repetitive surge current Maximum I2t for fusing IT(AV) IT(RMS) ITSM I2t TEST CONDITIONS VALUES 8 TC = 108 °C, 180° conduction, half sine wave 12.5 A 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 120 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 140 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 72 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 100 1000 A2√s 1.2 V 16.2 mΩ 0.87 V Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C Maximum on-state voltage drop VTM 8 A, TJ = 25 °C On-state slope resistance rt Threshold voltage VT(TO) Maximum reverse and direct leakage current IRM/IDM UNITS TJ = 125 °C TJ = 25 °C TJ = 125 °C A2s 0.05 VR = Rated VRRM/VDRM 1.0 mA Typical holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A 30 Maximum latching current IL Anode supply = 6 V, resistive load 50 TJ = 25 °C 150 V/μs 100 A/μs VALUES UNITS Maximum rate of rise of off-state voltage dV/dt Maximum rate of rise of turned-on current dI/dt TRIGGERING PARAMETER SYMBOL TEST CONDITIONS PGM 8.0 Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger IGT VGT VGD IGD W Anode supply = 6 V, resistive load, TJ = - 65 °C 20 Anode supply = 6 V, resistive load, TJ = 25 °C 15 Anode supply = 6 V, resistive load, TJ = 125 °C 10 Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2 Anode supply = 6 V, resistive load, TJ = 25 °C 1 Anode supply = 6 V, resistive load, TJ = 125 °C 0.7 mA V 0.2 TJ = 125 °C, VDRM = Rated value 0.1 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time www.vishay.com 2 tq TEST CONDITIONS TJ = 25 °C 0.8 3 TJ = 125 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] μs 100 Document Number: 94499 Revision: 08-Jun-10 VS-12TTS08SPbF High Voltage Series Phase Control SCR, 8 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS VALUES UNITS - 40 to 125 °C DC operation 1.5 62 Mounting surface, smooth and greased °C/W 0.5 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf ⋅ cm (lbf ⋅ in) Approximate weight Mounting torque 12TTS08 R thJC (DC) = 1.5 K/ W 120 115 Conduc tion Angle 110 30° 60° 105 90° 120° 180° 100 0 2 4 6 8 10 12TTS08S 10 180° 120° 90° 60° 30° 9 8 7 6 RMSLimit 5 4 Conduction Angle 3 2 12TTS08 TJ= 125°C 1 0 0 1 2 3 4 5 6 7 8 9 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 3 - On-State Power Loss Characteristics 125 12TTS08 R thJC(DC) = 1.5 K/ W 120 115 Conduction Period 110 30° 60° 90° 120° 105 180° DC 100 0 2 4 6 8 10 12 14 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Document Number: 94499 Revision: 08-Jun-10 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 125 Maximum Average On-state Power Loss (W) Case style D2PAK (SMD-220) Marking device 14 DC 180° 120° 90° 60° 30° 12 10 8 RMS Limit 6 4 Conduction Period 2 12TTS08 TJ = 125°C 0 0 2 4 6 8 10 12 14 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-12TTS08SPbF High Voltage Series Phase Control SCR, 8 A 130 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. 120 Initial TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 110 100 90 80 70 12TTS08 60 1 10 150 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Vishay Semiconductors Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ= 125°C No Voltage Reapplied Rated VRRM Reapplied 140 130 120 110 100 90 80 70 12TTS08 60 50 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 12TTS08 100 TJ= 25°C 10 TJ= 125°C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 12TTS08 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94499 Revision: 08-Jun-10 VS-12TTS08SPbF High Voltage Series Phase Control SCR, 8 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 12 T T S 08 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating (12.5 A) 3 - Circuit configuration: TRL PbF 8 9 T = Single thyristor 4 - Package: T = TO-220AC 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage rating (08 = 800 V) 7 - S = TO-220 D2PAK (SMD-220) version 8 - None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Document Number: 94499 Revision: 08-Jun-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1