2SA940 ® Pb 2SA940 Pb Free Plating Product PNP Silicon Epitaxial Power Transistor FEATURES Vertical Output Applications. 13.08±0.20 COLLECTOR 2 BASE 1 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 TO-220C 1.27±0.20 1.52±0.20 1.30±0.20 9.19±0.20 z 2.80±0.20 Power Amplifier Applications. 15.70±0.20 APPLICATIONS 4.50±0.20 20 6.50±0.20 φ Complements the 2SC2073. z 0. ± 60 3. 2.40±0.20 3.02±0.20 z 9.90±0.20 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Package Dimension Dimensions in Millimeters MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A IB Base Current -0.5 A PC Tj,Tstg Collector Dissipation Junction and Storage Temperature Ta=25℃ Tc=25℃ 1.5 W 25 -55 to +150 ℃ Page 1/3 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 2SA940 ® ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Test conditions MIN Collector-base Breakdown Voltage V(BR)CBO IC=-100μA,IE=0 -150 V Collector-emitter Breakdown Voltage V(BR)CEO IC=-1mA,IB=0 -150 V Emitter-base Breakdown Voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector Cut-off Current ICBO VCB=-120V,IE=0 -10 μA Emitter Cut-off Current IEBO VEB=-5V,IC=0 -10 μA DC Current Gain hFE VCE=-10V,IC=-500mA Collector-emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA Base-emitter Voltage VBE(on) VCE=-10V,IB=-500mA Transition Frequency fT VCE=-10V, IC=-0.5A 4 MHz Collector Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 55 pF TYP 40 -0.65 MAX UNIT 140 -0.75 -1.5 V -0.85 V Page 2/3 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 2SA940 ® TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Page 3/3 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/