TYSEMI 1N5402

Product specification
1N5400-1N5408
Features
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 200A Peak
Low Reverse Leakage Current
MaximumRatingsandElectricalCharacteristics @ TA = 25
Parameter
unless otherwise specified
Symbol
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking Voltage
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Unit
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
VR
RMS Reverse Voltage
VR(RMS)
IO
3.0
A
IFSM
200
A
VFM
1.0
V
Average Rectified Output Current @ TA = 105 *1
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ IF = 3.0A
Peak Reverse Current
@ TA = 25
10
IRM
Typical Junction Capacitance *2
Cj
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
R
JA
Tj, TSTG
A
100
at Rated DC Blocking Voltage @ TA = 150
50
25
15
pF
K/W
-65 to 150
*1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
*2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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Product specification
1N5400-1N5408
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
4.0
3.0
2.0
1.0
0
25
50
75
100
125
150
175
200
100
10
1.0
0.2
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
200
100
1N5400 - 1N5405
100
Cj, CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
Tj = 25ºC
1N5406 - 1N5408
10
Tj = 25°C
Pulse width = 8.3ms
f = 1MHz
Tj = 25ºC
1.0
10
1.0
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
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1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
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