TYSEMI 1PS79SB30

Product specification
1PS79SB30
SOD-523
+0.05
0.3-0.05
Unit: mm
1.2
+0.1
-0.1
+0.05
0.8-0.05
Features
Very Low forward voltage
+
+0.1
0.6-0.1
-
Very Low reverse current
Guard ring protected
+0.1
1.6-0.1
0.77max
+0.05
0.1-0.02
0.07max
Ultra small plastic SMD package.
Absolute Maximum Ratings Ta = 25
Max
Unit
continuous reverse voltage
Parameter
Symbol
VR
40
V
continuous forward current
IF
200
mA
300
mA
1
A
repetitive peak forward current
IFSM
non-repetitive peak forwrad current
Conditions
tp
1 s;ä
Min
0.5
t = 8.3 ms half sinewave;
IFSM
JEDEC method
storage temperature
Tstg
junction temperature
Tj
operating ambient temperature
-65
+150
150
Tamb
-65
+150
Electrical Characteristics Ta = 25
Parameter
Symbol
forward voltage
VF
Conditions
Typ
Max
IF = 0.1 mA
190
220
IF = 1 mA
250
290
IF = 10 mA
320
360
IF = 100 mA
440
500
IF = 200 mA
520
600
Unit
mV
capacitance reverse current
IR
VR = 25 V, note 1;
0.5
A
diods capacitance
Cd
VR = 1 V, f = 1 MHz;
20
pF
450
K/W
thermal resistance from junction to ambient
Rth j-a
Note
1. Pulse test: pulse width = 300
s, ä = 0.02.
Marking
Marking
G1
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1