Product specification 2N3906 Features PNP silicon epitaxial planar transistor for switching and 1 EMITTER Amplifier applications 2 BASE 3 COLLECTOR Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 V IC -0.2 A PC 0.625 W TJ, Tstg -55 to 150 Collector Current- Continuous Collector Dissipation Junction and Storage Temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit -40 V -40 V Collector - base breakdown voltage VCBO Ic= -100 ìA Collector - emitter breakdown voltage VCEO Ic= -1 mA Emitter- base breakdown voltage VEBO IE= -100 ìA Collector cut-off current IcBO VCB= -40 V , IE=0 -0.1 ìA Collector cut-off current IcEO VCE= -40 V , VBE(off)=-3V -50 nA Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 ìA DC current gain hFE IE=0 IB=0 IC=0 -5 VCE= -1V, IC= -10mA 100 VCE= -1V, IC= -50mA 60 VCE= -1V, IC= -100mA 30 V 400 Collector- emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.4 V Base - emitter saturation voltage VBE(sat) IC=-50 mA, IB= -5mA -0.95 V Delay time td VCC=-3.0V,VBE=0.5V 35 Rise time tr IC=-10mA,IB1=-1.0mA 35 Storage time ts VCC=-3.0V,IC=-10mA 225 Fall time tf IB1=IB2=-1.0mA 75 Transition frequency fT VCE= -20V, IC= -10mA, f=100MHz http://www.twtysemi.com [email protected] 250 4008-318-123 ns ns MHz 1 of 1