TYSEMI 2PC4081Q

Product specification
2PC4081
Features
High current (max. 100 mA)
Low voltage (max. 40 V)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
200
mA
mW
Total power dissipation *
Ptot
200
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
625
K/W
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
Testconditons
Min
Typ
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150
Emitter cut-off current
IEBO
IC = 0; VEB = 4 V
DC current gain
2PC4081Q
2PC4081R
2PC4081S
hFE
IC = 1 mA; VCE = 6 V
Collector-emitter saturation voltage
120
180
270
nA
5
ìA
100
nA
400
Cc
IE = ie = 0; VCB = 12 V; f = 1 MHz
Transition frequency
fT
IC = 2 mA; VCE = 12 V; f = 100 MHz
300 ìs; ä
Unit
100
270
390
560
VCE(sat) IC = 50 mA; IB = 5 mA; *
Collector capacitance
* Pulse test: tp
Max
2
100
3.5
mV
pF
MHz
0.02.
hFE Classification
TYPE
2PC4081Q
2PC4081R
2PC4081S
Marking
ZQ
ZR
ZS
http://www.twtysemi.com
[email protected]
4008-318-123
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