Product specification 2SA1121 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low frequency amplifier 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -4 V Collector current IC -500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 mA, IE = 0 -35 V Collector to emitter breakdown voltage V(BR)CEO IC = -1 mA, RBE = -35 V Emitter to base breakdown voltage V(BR)EBO IE = -10 mA, IC = 0 -4 Collector cutoff current ICBO Collector to emitter saturation voltage V VCB = -20 V, IE = 0 VCE(sat) IC = -150 mA, IB = -15 mA DC current transfer ratio hFE VCE = -3 V, IC = -10 mA Base to emitter voltage VBE VCE = -3 V, IC = -10 mA -0.2 60 -0.5 ìA -0.6 V 320 -0.64 V hFE Classification Marking SB SC SD hFE 60 120 100 200 160 320 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1