TYSEMI 2SA1163

Transistor
IC
Transistor
Transistors
DIP
SMDType
Type
SMD
Type
Product specification
2SA1163
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
High hFE.
0.55
Small package.
+0.1
1.3-0.1
+0.1
2.4-0.1
High voltage.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Low noise.
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
IC
-100
mA
Collector current
Base current
IB
-20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cut-off current
ICBO
VCB = -120 V, IE = 0
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
DC current gain
hFE
VCE = -6 V, IC = -2 mA
Collector-emitter saturation voltage
Min
Typ
200
fT
Unit
-0.1
ìA
-0.1
ìA
700
VCE (sat) IC = -10 mA, IB = -1 mA
Transition frequency
Max
-0.3
VCE = -6 V, IC = -1 mA
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
Noise figure
NF
VCB=-6 V, IC=-0.1 mA, f=1 kHz,Rg=10 kÙ
V
100
MHz
4
pF
1.0
10
dB
hFE Classification
Marking
CG
CL
Rank
GR
BL
hFE
200 400
350 700
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4008-318-123
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