TYSEMI 2SA1179

Product specification
2SA1179
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
High breakdown voltage
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-55
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-150
mA
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-50 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC = -10ìA , IE = 0A
-55
Collector-emitter breakdown voltage
VCEO
IC = -1mA , RBE =
-50
V
Emitter-base breakdown voltage
VEBO
IE = -10ìA , IC = 0A
-5
V
Collector cutoff current
ICBO
VCB = -35V , IE = 0A
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
DC current Gain
hFE
VCE = -6V , IC = -1mA
Collector-emitter saturation voltage
VCE(sat) IC = -50mA , IB = -5mA
Base-emitter saturation voltage
VBE(sat) IC = -50mA , IB = -5mA
Output capacitance
Cob
Transition frequency
fT
V
200
-0.1
A
-0.1
A
400
-0.5
-1.0
V
V
VCB = -6V , IE=0 ,f = 1MHz
4.0
pF
VCE = -6V , IC = -10mA
180
MHz
Marking
Marking
M
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