Product specification 2SA1611 Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -60V, IE=0 -0.1 ìA Emitter cutoff current IEBO VEB = -5V, IC=0 -0.1 ìA hFE VCE = -6V , IC = -1mA DC current gain * Collector-emitter saturation voltage VCE(sat) IC = -100mA , IB = -10mA Base-emitter voltage Gain bandwidth product Output capacitance * Pulse test: tp Min 90 Typ 200 600 -0.18 -0.3 V VBE VCE = -6V , IC = 1mA -0.58 -0.62 -0.68 V fT VCE = -6V , IE = 10mA 180 MHz VCB = -10V , IE = 0 , f = 1.0MHz 4.5 pF Cob 300 ìs; d Testconditons 0.02. hFE Classification Marking M4 hFE 90 180 http://www.twtysemi.com M5 135 M6 270 200 400 M7 300 [email protected] 600 4008-318-123 1 of 1