Product specification 2SA1766 Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -15 V Collector current IC -300 mA Collector current (pulse) ICP -500 mA Base current IB -60 mA Collector dissipation PC 1.3 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current IcBO VCB = -20V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -10V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -5V , IC = -10mA fT VCE = -10V , IC = -10mA 100 MHz VCB = -10V , f = 1MHz 12 pF Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Cob 500 VCE(sat) IC = -200mA , IB =-4mA VBE(sat) IC = -200A , IB =-4mA 800 1200 -0.12 -0.5 V -0.77 -1.1 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -30 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -25 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -15 V Marking Marking AL http://www.twtysemi.com [email protected] 4008-318-123 1 of 1