Product specification 2SA1774 SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 Excellent hFE linearity. +0.05 0.8-0.05 2 0.55 Features +0.01 0.1-0.01 PNP silicon transistor 0.35 3 +0.25 0.3-0.05 +0.1 -0.1 0.5 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -0.15 A Collector power dissipation PC 0.15 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-base breakdown voltage VCBO IC=-50 A Min Typ Max Unit -60 V Collector-emitter breakdown voltage VCEO IC=-1mA -50 V Emitter-base breakdown voltage VEBO IE=-50ìA -6 V Collector cutoff current ICBO VCB=-60V -0.1 IEBO VEB=-6V -0.1 VCE(sat) IC/IB=-50mA/-5mA -0.5 Emitter cutoff current Collector-emitter saturation voltage DC current Gain hFE VCE=-6V, IC=-1mA 120 Output capacitance Cob VCB=-12V, IE=0A, f=1MHz 4.0 Transition frequency fT VCE=-12V, IE=2mA, f=30MHz 140 A A V 560 5.0 pF MHz ■ hFE Classification Marking FQ FR FS Rank Q R S hFE 120～270 180 ～390 270～560 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1