TYSEMI 2SA1813

Transistors
IC
SMD Type
Product specification
2SA1813
Features
Very small-sized package.
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage
(VCE(sat)
0.3V).
High VEBO (VEBO
15V).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-30
V
Collector-emitter voltage
VCEO
-25
V
Emitter-base voltage
VEBO
-15
V
Collector current
IC
-150
mA
Collector current (pulse)
ICP
-300
mA
Base current
IB
-30
mA
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = -20V , IE = 0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -10V , IC = 0
-0.1
ìA
DC current Gain
hFE
VCE = -5V , IC = -1mA
Gain bandwidth product
fT
Common base output capacitance
Cob
Testconditons
Min
500
Typ
800
1200
VCE = -10V , IC = -10mA
210
MHz
VCB = -10V , f = 1MHz
2.6
pF
Collector-to-emitter saturation voltage
VCE(sat) IC = -50mA , IB =-1mA
-0.15
-0.3
mV
Base-to-emitter saturation voltage
VBE(sat)
-0.78
-1.1
V
Collector-to-base breakdown voltage
IC = -50mA , IB =-1mA
V(BR)CBO IC = -10ìA , IE = 0
-30
V
Collector-to-emitter breakdown voltage
V(BR)CEO
IC = -1mA , RBE =
-25
V
Emitter-to-base breakdown voltage
V(BR)EBO
IE = -10ìA , IC = 0
-15
V
Marking
Marking
KS
http://www.twtysemi.com
[email protected]
4008-318-123
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