IC SMD Type Product specification 2SA1947 Features High fT: fT=100MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1.5A Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Symbol Rating Unit VCBO -30 V Emitter-base voltage VEBO -4 V Collector-emitter voltage VCEO -25 V ICM -1.5 A Peak collector current Collector current IC -1 A Collector dissipation (Ta=25 ) PC 500 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Colllector-base breakdown voltage V(BR)CBO IC=-10ìA,IE=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-10ìA,IC=0 -4 V Collector-emitter breakdown voltage V(BR)CEO IC=-100ìA,RBE= -25 V Collector cutoff current ICBO VCB=-25V,IE=0 -1 ìA Emitter cutoff current IEBO VEB=-2V,IC=0 -1 ìA hFE VCE=-1V,IC=-500mA DC current gain Collector-emitter saturation voltage 55 300 VCE(sat) IC=-500mA,IB=-25mA Gain bandwidth product fT VCE=-6V,IE=-10mA -0.5 100 V MHz hFE Classification Marking ABC ABD ABE hFE 55 110 90 180 150 300 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1