Transistors SMD Type Product specification 2SA1971 Features High voltage: VCE = -400 V Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V Collector current IC -0.5 A Collector current(pulse) ICP -1 A Base current IB -0.25 A 500 PC Collector power dissipation mW 1000 * Junction temperature Storage temperature range Tj 150 Tstg -55 to +150 * Mounted on ceramic substrate (250 mm2 X 0.8 t) Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter ICBO VCB =-400V, IE=0 -10 ìA Emitter cut-off current IEBO VEB=-7V,IC=0 -1 ìA Collector-emitter breakdown voltage DC current gain Symbol Testconditons V(BR)CEO IC=-10mA, IB=0 hFE Min Typ -400 V VCE=-5V,IC=-20mA 140 450 VCE=-5V,IC=-100mA 140 400 Collector-emitter saturation voltage VCE (sat) IC=-100mA,IB=-10mA -0.4 -1 V Base-emitter saturation voltage VBE (sat) IC=-100mA,IB=-10mA -0.76 -0.9 V Transition frequency fT VCE=-5V,IC=-50mA 35 MHz VCB=-10V,IE=0,f=1MHz 18 pF Collector output capacitance Cob Turn-on time ton 0.2 ìs Storage time tstg 2.3 ìs tf 0.2 ìs Fall time http://www.twtysemi.com [email protected] 4008-318-123 1of 1