Product specification 2SB968 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Possible to solder the radiation fin directly to printed cicuit board. Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 Large collector power dissipation PC. +0.15 0.50 -0.15 High collector-emitter voltage VCEO. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -1.5 A Peak collector current ICP -3 A Collector power dissipation PC 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -1 mA, IE = 0 -50 V Collector-emitter voltage VCEO IC = -2 mA, IB = 0 -40 V Collector-base cutoff curent ICBO VCB = -20 V,IE = 0 -1 ìA Collector cutoff curent ICEO VCE = -10 V,IB = 0 -100 ìA Emitter-base cutoff current IEBO VEB = -5 V, IC = 0 -10 ìA Forward current transfer ratio hFE VCE = -5 V, IC = -1 A 80 VCE = -5 V, IC = -1mA 10 Collector-emitter saturation voltage VCE(sat) IC = -1.5 A, IB = -0.15 A Base-emitter saturation voltage VBE(sat) IC = -2 A, IB = -0.2 A Transition frequency fT Collector output capacitance Cob 220 V -1 V -1.5 V VCE = -5 V, IC = -0.5 A , f = 200 MHz 150 MHz VCB = -20V , IE = 0 , f = 1.0MHz 45 pF hFE Classification Rank Q R hFE 80 160 120 220 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1