Transistors SMD Type Product specification 2SC2983 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High Transiton Frequency: Ft=100MHz(TYP.) 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A Base Current IB 0.3 A 1 W 15 W Total Power dissipation Ta = 25 PC TC = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit collector cutoff current ICBO VCB=160V,IE=0 1 ìA emitter cutoff current IEBO VEB=5V,IC=0 1 ìA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA,IB=0 Emitter-Base Breakdown Voltage V(BR)EBO DC current Gain Collector-Emitter Saturation Voltage 160 IE=1mA,IC=0 5 hFE VCE=5V,IC=100mA 70 VCE(sat) IC=500mA,IB=50mA V V 240 1.5 Base- Emitter Voltage VBE VCE=5V,IC=500mA Transition Frequency fT VCE=10V,IC=100mA 100 MHz VCB=10V.IE=0,f=1MHz 25 pF Collector Output Capacitance cob 1 V V hFE Classification Marking O Y hFE 70 to 140 120 to 240 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1