Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 20 V Collector to emitter voltage VCEO 12 V Emitter to base voltage VEBO 3.0 V Collector current (DC) IC 100 mA Total power dissipation Ptot 200 mW Tj 150 Tstg -65 to +150 Junction temperature Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 10 V, IE = 0 mA 1.0 A Emitter cutoff current IEBO VEB = 1.0 V, IC = 0 mA 1.0 A DC current gain * hFE VCE = 10 V, IC = 20 mA Insertion power gain 2 50 120 250 VCE = 10 V, IC = 20 mA, f = 1 GHz 11.5 Noise figure NF VCE = 10 V, IC = 7 mA, f = 1 GHz 1.1 2.0 dB Reverse transfer capacitance Cre VCB = 10 V, IE = 0 mA, f = 1 MHz 0.55 1.0 pF S21e Transition frequency fT *. Pulse measurement: PW 350 s, Duty Cycle VCE = 10 V, IC = 20 mA 7 dB GHz 2%. hFE Classification Marking R23 R24 R25 Rank Q R S hFE 50 100 http://www.twtysemi.com 80 160 125 250 [email protected] 4008-318-123 1 of 1