Product specification 2SC3360 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High voltage VCEO=200V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=90 to 450 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 200V, IE=0 Emitter cutoff current IEBO VEB = 5V, IC=0 DC current gain * hFE Min Typ VCE =10V , IC = 10mA 90 200 VCE =10V , IC = 50mA 50 200 VCE =10V , IC = 10mA 0.6 Max Unit 100 nA 100 nA 450 0.64 0.7 V Collector-emitter saturation voltage * VCE(sat) IC = 50mA , IB = 5mA 0.1 0.3 V Base saturation voltage * VBE(sat) IC = 50mA , IB = 5mA 0.8 1.2 V Base-emitter voltage * VBE VCE = 10V , IE = -10mA 160 MHz Output capacitance Cob VCB = 30V , IE = 0 , f = 1.0MHz 2.8 pF Turn-on time ton IC = 10mA, IB1 = -IB2 = 1mA, 0.15 ìs Storage time tstg VCC = 10 V 1.3 ìs VBE(off) = -2.5V 0.3 ìs Gain bandwidth product fT Fall time * Pulse test: tp tf 350 ìs; d 0.02. hFE Classification Marking N15 N16 N17 hFE 90 180 135 270 200 450 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1