Transistors IC SMD Type Product specification 2SC3380 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 ■ Features 1.80±0.1 2.50±0.1 4.00±0.1 ● High frequency high voltage amplifier ● High voltage switch 0.53±0.1 3.00±0.1 0.80±0.1 3 0.44±0.1 2.60±0.1 0.48±0.1 2 0.40±0.1 1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA PC* 1 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ Total power dissipation * Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = 10 μA, IE = 0 300 V Collector to emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 300 V Emitter to base breakdown voltage V(BR)EBO IE = 10 μA, IC = 0 5 V Collector cutoff current ICEO Collector to emitter saturation voltage DC current gain VCB = 250V,IB=0 VCE(sat) IC = 20 mA, IB = 2 mA hFE Transition frequency fT Output Capacitance Cob VCE =20V,Ic=20mA VCE = 20V ,Ic=20mA 30 1.0 μA 1.5 V 200 80 VCB = 20 V, IE = 0, f = 1.0 MHz MHz 4 pF ■ Marking Marking AS http://www.twtysemi.com [email protected] 4008-318-123 1of 1