Transistors IC SMD Type Product specification 2SC3606 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) 1 0.55 Low noise figure, high gain. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V IC 80 mA Collector current Base current IB 40 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to 125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 1 ìA Emitter cut-off current IEBO VEB = 1 V, IC = 0 1 ìA DC current gain hFE VCE = 10 V, IC =20mA 250 V Collector output capacitance Cob Reverse transfer capacitance Cre Transition frequency fT 30 10 VCB=10V,IE=0,f=1MHz, 0.7 VCE =10 V, IC =20 mA 5 2 |S21e| (1) VCE =10 V, IC =20 mA, f =500 MHz Insertion gain |S21e| 2 (2) VCE = 10 V, IC = 20 mA, f =1 GHz Noise figure NF (1) VCE =10 V, IC = 5 mA, f = 500 MHz NF (2) VCE = 10 V, IC = 5 mA, f = 1 GHz 7.5 pF 1.15 pF 7 GHz 16.5 dB 11 dB 1 dB 1.1 2 dB Marking Marking MH http://www.twtysemi.com [email protected] 4008-318-123 1 of 1