SMD Type Product specification 2SC3647 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Collector Current IC 2 A Collector Current (Pulse) ICP 3 A PC 500 mW PC * 1.5 W Tj 150 Tstg -55 to +150 Collector Power Dissipation Jumction temperature Storage temperature Range 2 * Mounted on ceramic board (250 mm x 0.8 mm) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current ICBO VCB = 100V , IE = 0 100 nA Emitter Cut-off Current IEBO VEB = 4V , IC = 0 100 nA Collector-Base Breakdown Voltage V(BR)CBO IC = 10uA , IE = 0 120 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA , RBE = 100 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 10uA , IC = 0 6 V DC Current Gain hFE VCE = 5V , IC = 100mA 100 400 Collector-Emitter Saturation Voltage VCE(sat) IC = 1A , IB = 100mA 0.22 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC = 1A , IB = 100mA 0.85 1.2 V Gain-Bandwidth Product fT Collector Output Capacitance Cob Turn-On Time ton Storage Time Fall Time http://www.twtysemi.com tstg VCE = 10V , IC = 100mA 120 MHz VCB = 10V , IE = 0 , f = 1MHz 25 pF 80 See Test Circuit. tf [email protected] 750 ns 40 4008-318-123 1 of 3 SMD Type Product specification 2SC3647 Test Circuit hFE Classification CC Marking Rank hFE R 100 S 200 140 T 280 200 400 Electrical Characteristics Curves http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 SMD Type Product specification 2SC3647 http://www.twtysemi.com [email protected] 4008-318-123 3 of 3