Transistors SMD Type Product specification 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 15 V Collector current IC 1.2 A Collector current (pulse) Icp 2 A mW Collector dissipation PC 500 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB=20V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB=10V, IC=0 0.1 ìA DC current gain hFE VCE=5V, IC=500mA fT VCE=10V, IC=50mA 220 MHz Cob VCB=10V, f=1MHz 17 pF Gain bandwidth product Output capacitance Testconditons Min 800 Typ 1500 3200 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=10mA 0.12 0.5 V Base-emitter saturation voltage VBE(sat) IC=500mA, IB=10mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC=10ìA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=1mA, RBE= 25 V Emitter-base breakdown voltage V(BR)EBO IE=10ìA, IC=0 15 V 30 V Marking Marking CF http://www.twtysemi.com [email protected] 4008-318-123 1 of 1