Product specification 2SC4117 Features High voltage High hFE Low noise Small package 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA Collector power dissipation PC 100 mW Junction temperature Storage temperature range Tj 125 Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 120 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA hFE VCE =6 V, IC = 2 mA DC current gain Collector-emitter saturation voltage Testconditons Min Typ 200 700 VCE (sat) IC = 10 mA, IB = 1 mA 0.3 V VCE = 6 V, IC = 1 mA 100 MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 3.0 pF Noise figure NF VCE=6 V, IC=0.1 mA, f=1kHz,RG=10 K 1.0 Transition frequency fT 10 dB hFE Classification Marking DG DL Rank GR BL hFE 200 400 350 700 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1