Product specification 2SC4618 SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 2 1 +0.15 1.6-0.15 ● Low rbb, high gain, and excellent noise characteristics. +0.05 0.8-0.05 ● Low collector capacitance. +0.01 0.1-0.01 0.55 ■ Features 0.35 3 +0.25 0.3-0.05 +0.1 -0.1 0.5 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 0.15 W Junction temperature Tj 150 ℃ Storage temperature Tstg -55 to +150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50μA 40 V Collector-emitter breakdown voltage BVCEO IC=1mA 25 V Emitter-base breakdown voltage 5 BVEBO IE=50μA Collector cutoff current ICBO VCB=24V 0.5 μA Emitter cutoff current IEBO VEB=3V 0.5 μA 0.3 V Collector-emitter saturation voltage V VCE(sat) IC/IB=10mA/1mA DC current gain hFE Transition frequency fT Output capacitance Cob VCE=6V, IC=1mA 82 180 VCE=6V, IE=-1mA, f=100MHz 300 VCE=6V, IE=0A, f=1MHz 1.3 MHz 2.2 pF ■ Marking Marking AN http://www.twtysemi.com AP AQ [email protected] 4008-318-123 1 of 1