TYSEMI 2SD1250

Transistors
IC
SMD Type
Product specification
2SD1250
6.50
+0.2
5.30-0.2
+0.15
-0.15
+0.15
1.50 -0.15
TO-252
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
Low collector-emitter saturation voltage VCE(sat)
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High forward current transfer ratio hFE which has satisfactory linearity
3 .8 0
Features
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
200
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
V
VEBO
6
Collector current
IC
2
Peak collector current
ICP
3
Collector power dissipation
PC
TC = 25
A
1.3
W
30
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 500 ìA, IE = 0
200
V
Collector-emitter voltage (Base open)
VCEO
IC =5 mA, IB = 0
150
V
Emitter-base voltage (Collector open)
VEBO
IE = 500 ìA, IC = 0
6
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 200 V, IE = 0
Emitter-base cutoff current (Collector open)
IEBO
Forward current transfer ratio
hFE
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
VEB = 4 V, IC = 0
VCE = 10 V, IC = 150 mA
60
VCE = 10 V, IC = 400 mA
50
50
ìA
50
ìA
240
VBE
VCE = 10 V, IC = 400 mA
1.0
V
VCE(sat)
IC = 500 mA, IB = 50 mA
1.0
V
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
hFE Classification
Rank
Q
P
hFE
60 to 140
100 to 240
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4008-318-123
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