Transistors SMD Type Product specification 2SD1758 TO-252 Unit: mm Features 6.50 +0.2 5.30-0.2 Low VCE(sat), VCE(sat) = 0.5V +0.15 1.50 -0.15 +0.15 -0.15 2.30 +0.1 -0.1 +0.8 0.50-0.7 (IC = 2A, IB = 0.2A). +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 NPN silicon transistor +0.15 0.50 -0.15 Epitaxial planar type 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Collector current (pulse) * ICP 2.5 A Collector power dissipation PC Tc = 25 1 W 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pw=20ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage BVCBO IC=50ìA 40 V Collector-emitter voltage BVCEO IC=1mA 32 V Emitter-base voltage BVEBO IE=50ìA 5 V Collector cutoff current ICBO VCB=20V 1 ìA Emitter cutoff current IEBO VEB=4V 1 ìA Forward current transfer ratio hFE VCE=3V,IC=0.5A Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.2A Transition frequency fT Output capacitance Cob 82 390 0.5 0.8 V VCE=5V, IE= -500mA, f=100MHz 100 MHz VCB=10V, IE=0A, f=1MHz 30 pF hFE Classification Rank P Q R hFE 82 180 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1