Transistors IC SMD Type Product specification 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE(sat).VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 80 V Collector-emitter breakdown voltage BVCEO IC=2mA 80 V Emitter-base breakdown voltage BVEBO IE=50ìA 5 V Collector cutoff current ICBO VCB=50V 0.5 ìA Emitter cutoff current IEBO VEB=4V 0.5 ìA 0.5 V Collector-emitter saturation voltage VCE(sat) IC/IB=500mA/50mA DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=3V, IC=100mA 0.2 120 390 VCE=10V, IE= -50mA, f=100MHz 120 MHz VCB=10V, IE=0, f=1MHz 7.5 pF hFE Classification AJ Marking Rank Q R hFE 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1