Transistors IC SMD Type Product specification 2SD1820A Features Low collector-emitter saturation voltage VCE(sat). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 60 V Collector-emitter voltage VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 Collector cutoff current ICBO VCB = 20 V, IE = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 150 mA Collector-emitter saturation voltage 85 VCE(sat) IC = 300 mA, IB = 30 mA Transition frequency fT Collector output capacitance VCB = 10 V, IE = 0, f = 1 MHz ìA 340 0.35 VCB = 10 V, IE = -50 mA, f = 200 MHz Cob V 0.1 0.6 200 6 V MHz 15 pF hFE Classification Marking XQ XR XS X Rank Q R S No-rank hFE 85 170 120 240 170 340 85 340 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1