Transistors IC SMD Type Product specification 2SD1999 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 4 A Collector current (pulse) ICP 6 A Collector dissipation PC 1.5 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current IcBO DC current Gain hFE Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Testconditons Min Typ VCB = 20V , IE = 0 VCE = 2V , IC = 0.5A 70 VCE = 2V , IC = 3A 50 Max Unit 1.0 ìA fT VCE = 2V , IC = 0.5A 200 MHz Cob VCB = 10V , f = 1MHz 45 pF VCE(sat) IC = 3A , IB = 150mA 0.25 VBE(sat) IC = 3V , IB = 150mA 0.5 V 1.5 V Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 25 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 10ìA , RBE = 25 V IC = 10mA , RBE = 20 Diode forward voltage VF Base-emitter resistance RBE IF = 0.5A 1.5 1.5 V kÙ Marking Marking DN http://www.twtysemi.com [email protected] 4008-318-123 1 of 1