Transistors IC SMD Type Product specification 2SD2098 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE(sat). +0.1 4.00-0.1 Features Excellent DC current gain characteristics. 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 NPN silicon transistor. 1. Base 0.40 +0.1 -0.1 +0.1 3.00-0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 5 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 50 V Collector-emitter breakdown voltage BVCEO IC=1mA 20 V Emitter-base breakdown voltage BVEBO IE=50ìA 6 V Collector cutoff current ICBO VCB=40V 0.5 ìA Emitter cutoff current IEBO VEB=5V 0.5 ìA 1.0 V Collector-emitter saturation voltage VCE(sat) IC=4 A, IB=0.1A DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=2V, IC=0.5A 0.3 120 390 VCE=6V, IE= -50mA, f=100MHz 150 MHz VCB=20V, IE=0A, f=1MHz 30 pF hFE Classification DJ Marking Rank Q R hFE 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1