Transistors IC SMD Type Product specification 2SD2153 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Excellent DC current gain characteristics. 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1 +0.1 4.00-0.1 Low saturation voltage. 1. Base 0.40 +0.1 -0.1 +0.1 3.00-0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 30 V Collector-emitter breakdown voltage BVCEO IC=1mA 25 V Emitter-base breakdown voltage BVEBO IE=50ìA 6 V ICBO VCB=20V IEBO VEB=5V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage VCE(sat) IC=1A, IB=20mA DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=6V, IC=0.5A 0.12 560 0.5 ìA 0.5 ìA 0.5 V 2700 VCE=10V, IE= -10mA, f=100MHz 110 MHz VCB=10V, IE=0A, f=1MHz 22 pF hFE Classification DN Marking Rank U V W hFE 560 1200 820 1800 1200 2700 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1