TYSEMI 2SD2324

Transistors
IC
SMD Type
Product specification
2SD2324
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Contains a diode between colletor and emitter.
0.4
3
Low saturation voltage.
1
0.55
Contains a bias resistor between base and emitter.
2
Large current capacity.
+0.1
0.95-0.1
+0.1
1.9-0.1
Small-sized package facilitating the realization of
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
high-density, small-sized hybrid ICs.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage, With Zener diode (11±3V)
Parameter
VCBO
20
V
Collector-emitter voltage, With Zener diode (11±3V)
VCEO
15
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.8
A
Collector current (pulse)
ICP
2
A
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
1.0
ìA
Collector cutoff current
IcBO
VCB = 15V , IE = 0
DC current Gain
hFE
VCE = 2V , IC = 0.5A
fT
VCE = 2V , IC = 0.5A
150
MHz
Cob
VCB = 10V , f = 1MHz
15
pF
Gain bandwidth product
Output capacitance
70
Collector-emitter saturation voltage
VCE(sat) IC = 500mA , IB = 10mA
0.16
0.3
V
Base-emitter saturation voltage
VBE(sat) IC = 500mA , IB = 10mA
0.85
1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
20
V
IC = 10ìA , RBE =
20
V
IC = 10mA , RBE =
15
Collector-to-emitter breakdown voltage
V(BR)CEO
Diode forward voltage
VF
Base-emitter resistance
RBE
IF = 0.5A
1.5
1
V
kÙ
Marking
Marking
BN
http://www.twtysemi.com
[email protected]
4008-318-123
1of 1