Transistors IC SMD Type Product specification 2SD965K Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 3 A Peak collector current ICP 7 A W Collector power dissipation PC 0.5 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage VCEO IC = 1 mA, IB = 0 20 Emitter-base breakdown voltage VEBO IE = 10 ìA, IC = 0 5 Collector-base cutoff current ICBO VCB = 10 V, IE = 0 0.1 A Collector-emitter cutoff current ICEO VCE = 10 V, IB = 0 1 A Emitter-base cutoff current IEBO VEB = 5 V, IC = 0 0.1 A Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) Collector output capacitance Cob Transition frequency fT VCE = 2 V, IC = 0.5 A 230 VCE = 2 V, IC = 1 A 150 IC = 2 A, IB = 0.1 A V V 600 0.28 1.00 V VCB = 20 V, IE = 0, f = 1 MHz 26 50 pF VCB = 6 V, IE = -50 mA, f = 200 MHz 150 MHz hFE Classification Rank Q R hFE 230 380 340 600 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1