SMD Type Product specification 2SJ399 Application Low frequency power switching Features • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification 2SJ399 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –0.2 A –0.4 A 1 Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR –0.2 A Channel dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. Marking is “ZF–” Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –30 — — V I D = –100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±2 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –1 µA VDS = –30 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –10 µA, VDS = –5 V Static drain to source on state resistance RDS(on) — 2.7 5.0 Ω I D = –20 mA VGS = –4 V*1 — 2.0 3.0 Ω I D = –10 mA VGS = –10 V*1 Input capacitance Ciss — 1.1 — pF VDS = –10 V Output capacitance Coss — 22.3 — pF VGS = 0 Reverse transfer capacitance Crss — 0.17 — pF f = 1 MHz Turn-on delay time t d(on) — 530 — ns I D = –0.1 A Rise time tr — 2170 — ns VGS = –10 V Turn-off delay time t d(off) — 7640 — ns RL = 100 Ω Fall time tf — 7690 — ns PW = 5 µs http://www.twtysemi.com [email protected] 4008-318-123 2 of 2