TYSEMI 2SK1828

MOSFET
SMD Type
Product specification
2SK1828
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
2.5V Gate Drive
0.4
3
Features
1
High Speed
0.55
Low Threshold Voltage :Vth=0.5 to 1.5V
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
20
V
Gate to source voltage
VGSS
10
V
Drain current
ID
50
mA
Power dissipation
PD
200
mW
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10ms, duty cycle
5%
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain source breakdown voltage
VDSS
ID=100 A,VGS=0
Testconditons
Min
Typ
Max
20
Unit
V
Drain cut-off current
IDSS
VDS=20V,VGS=0
1.0
A
Gate leakage current
IGSS
VGS=10V,VDS=0
1
A
Forward transfer admittance
Yfs
VDS=3.0V,ID=10mA
Drain to source on-state resistance
20
RDS(on) VGS=2.5V,ID=10mA
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Switching time turn on time
Switching time turn off time
toff
ms
25
40
5.5
pF
1.6
pF
Crss
6.5
pF
ton
0.14
s
0.14
s
VDS=3.0V,VGS=0,f=1MHZ
ID=10mA,VGS(on)=0 to 2.5V,VDD=3.0V
Marking
Marking
KI
http://www.twtysemi.com
[email protected]
4008-318-123
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