TYSEMI 2SK1959

IC
SMD
SMD Type
Type
Product specification
2SK1959
SOT-89
Features
Unit: mm
4.50
1.50
+0.1
-0.1
+0.1
-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
Low ON resistance
RDS(on)=3.2 MAX.@VGS=1.5V,ID=50mA
3
2
+0.1
0.53-0.1
+0.1
0.44-0.1
2.60
+0.1
-0.1
+0.1
0.48-0.1
+0.1
0.80-0.1
1
RDS(on)=0.5 MAX.@VGS=4.0V,ID=1A
+0.1
4.00-0.1
Gate can be driven by 1.5V
1 Gate
1. Source
Base
1.
0.40
+0.1
-0.1
+0.1
3.00-0.1
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
16
V
Gate to source voltage
VGSS
7
V
ID
2.0
A
Drain current
Power dissipation
PD
2.0
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
W
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=16V,VGS=0
Gate leakage current
IGSS
VGS= 7V,VDS=0
Gate to Source Cutoff Voltage
Forward transfer admittance
Typ
Max
Unit
100
A
10
A
0.8
1.1
0.8
3.2
RDS(on) VGS=2.5V,ID=0.5A
0.36
0.6
VGS=4.0V,ID=1.0A
0.28
0.5
VGS(off) VDS=3V,ID=100 A
Yfs
VDS=3V,ID=1.0A
VGS=1.5V,ID=50mA
Drain to source on-state resistance
Min
Input capacitance
Ciss
Output capacitance
Coss
VDS=3V,VGS=0,f=1MHZ
0.5
1.0
V
S
160
pF
150
pF
Reverse transfer capacitance
Crss
50
pF
Turn-on delay time
td(on)
45
ns
190
ns
180
ns
210
ns
Rise time
Turn-off delay time
Fall time
http://www.twtysemi.com
tr
td(off)
ID=0.5A,VGS(on)=3V,RL=6
,VDD=3V,RG=10
tf
[email protected]
4008-318-123
1 of 1