Transistors IC MOSFET SMD Type Product specification 2SK2133 TO-263 +0.1 1.27 -0.1 Features Low on-resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.2 15.25 -0.2 0.1max +0.1 1.27-0.1 +0.2 5.28 -0.2 High avalanche capabil +0.2 2.54 -0.2 +0.2 8.7 -0.2 Low Ciss Ciss=1090 pF TYP. 5.60 RDS(on)=0.21 MAX.@VGS=10V,ID=8.0A +0.1 5.08-0.1 1 Gate 2 Drain +0.2 0.4-0.2 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 250 V Gate to source voltage VGSS 30 V ID 16 A Idp * 64 A Drain current Power dissipation TA=25 PD TC=25 1.5 W 75 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Symbol Testconditons IDSS VDS=250V,VGS=0 IGSS VGS= 30V,VDS=0 Min 2.0 VDS=10V,ID=8.0A 4.0 RDS(on) VGS=10V,ID=8.0A Input capacitance Ciss Output capacitance Coss VDS=10V,VGS=0,f=1MHZ Max Unit 100 A 10 VGS(off) VDS=10V,ID=1mA Yfs Typ 4.0 A V S 0.2 0.26 1090 pF 420 pF Reverse transfer capacitance Crss 80 pF Turn-on delay time td(on) 20 ns 40 ns Rise time Turn-off delay time Fall time http://www.twtysemi.com tr td(off) ID=8.0A,VGS(on)=10V,RL=18.75 ,RG=10 ,VDD=150V tf [email protected] 60 ns 20 ns 4008-318-123 1of 1